2014
DOI: 10.1364/oe.22.002111
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Distributed-feedback quantum cascade laser emitting at 32 μm

Abstract: In this work, we present GaInAs/AlAs/AlInAs quantum cascade lasers emitting from 3.2 to 3.4 μm. Single-mode emission is obtained using buried distributed-feedback gratings fabricated using standard deep-UV contact lithography. This technique can easily be transferred to industrial production. Devices with single-mode emission down to 3.19 μm were achieved with peak power of up to 250 mW at -20 °C. A tuning range of 11 cm(-1) was obtained by changing the device temperature between -30 °C and 20 °C.

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Cited by 11 publications
(9 citation statements)
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“…Overall, QCLs have been greatly improved, but many challenges remain, such as intervalley scattering, heat removal from the core region, and interface scattering, which limit the performance of QCLs, especially at short wavelengths [57]. Although InP-based QCLs emitting at wavelengths of 3-4 µm have been demonstrated recently [58,59], they are still not commercially available.…”
Section: Quantum Cascade Lasersmentioning
confidence: 99%
“…Overall, QCLs have been greatly improved, but many challenges remain, such as intervalley scattering, heat removal from the core region, and interface scattering, which limit the performance of QCLs, especially at short wavelengths [57]. Although InP-based QCLs emitting at wavelengths of 3-4 µm have been demonstrated recently [58,59], they are still not commercially available.…”
Section: Quantum Cascade Lasersmentioning
confidence: 99%
“…However, the development of QCLs on InP in this region is challenging, because the band offset between well and barrier required to achieve radiative intersubband transitions at a high enough energy can only be achieved in antimonide-based material systems or in the strained InGaAs/AlInAs material system [38][39][40][41]. We have previously published results of lasing action in the 3 µ m range [42]. In that work the device performances were impaired due to an unbalanced active region with an average 1.2% excess of indium and poor regrowth quality, resulting in leakage, high-threshold current densities, and mediocre power per QC period.…”
Section: Optimized Dfb-qcl Performancementioning
confidence: 99%
“…У сучасних квантових каскадних лазерах (ККЛ) [1,2] і квантових каскадних детекторах (ККД) [3,4] активними робочими елементами є плоскі багатошарові напівпровідникові резо-нансно-тунельні структури (РТС). За умов збе-реження когерентності електронного потоку робочі характеристики згаданих наноприла-дів, в значній мірі, визначаються геометрични-ми та фізичними параметрами РТС.…”
Section: вступunclassified