Distributed feedback lasers in the 760 to 810 nm range and epitaxial grating design

Abstract

We present the results from distributed feedback (DFB) lasers with emission wavelengths ranging from 760 to 810 nm and focus on the optimization of Bragg gratings realized with a patterned GaAsP layer that is overgrown with an AlGaAs cladding layer. The impact of the thickness and material composition of the GaAsP grating lines on the DFB laser performance is theoretically and experimentally investigated. 767 nm ridge waveguide DFB lasers with optimized gratings show excellent optoelectronic characteristics in terms of slope efficiency (0.9 W A −1 ) and linewidth (11 kHz).

GaAs-based distributed feedback laser at 780 nm for 87Rb cold atom quantum technology

“…For cooling 87 Rb atoms, 780.24 nm lasers with linewidths below ~5 MHz are required whilst the lasers for controlling and measuring superposition states typically external cavity lasers have been used to achieve linewidths from 20 kHz [3] down to a few Hz [4]. Most single mode diode lasers aimed at laser cooling have used DBR gratings with regrowth [5] but this is challenging when using AlGaAs materials due to oxidation.…”

“…Initial tests for short ridge devices indicate linewidths of ~10 MHz and initial lifetime tests have exceeded 200 hours. We will discuss methods being pursued to increasing the power and reducing the linewidth through longer ridges [5], coupled cavities and by integrating SOAs. Control of the population of electrons in hyperfine split states requires two laser outputs spaced by ~3.617 GHz .…”

Ultra-narrow linewidth DFB-laser with optical feedback from a monolithic confocal Fabry-Perot cavity

“…1. We use a 1.5 mm long, single quantum well AlGaAs distributed feedback (DFB) diode laser [18] designed and processed at the Ferdinand-Braun-Institute. The design wavelength is 780 nm.…”

High-power, micro-integrated diode laser modules at 767 and 780 nm for portable quantum gas experiments

“…The diode lasers for both wavelengths were designed and fabricated at the Ferdinand-Braun-Institut (FBH) [17,18]. They feature epitaxial structures that contain a single quantum well (SQW) active region and are optimized for narrow linewidth emission at their respective wavelengths.…”

“…They feature epitaxial structures that contain a single quantum well (SQW) active region and are optimized for narrow linewidth emission at their respective wavelengths. More details on the design and the performance of the DFB diode lasers at 767 and 780 nm can be found in [17] and [18]. The rear and front facets of the DFB diode laser chips are coated to a reflectivity of about 95% and less than 0.1%, respectively.…”