Distortion in RF CMOS short-channel low-noise amplifiers

Baki, R.A.; Tsang, T.K.K.; El-Gamal, M.N.

doi:10.1109/tmtt.2005.860897

Cited by 43 publications

(6 citation statements)

References 37 publications

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“…4b is used to calculate the noise performance, input and output impedance and gain. All the parasitics of the transistor such as In most of the previous work on LNA nonlinearity modeling, only the transconductance nonlinearities are taken into account [1], [6][7][8]. However, we have observed that for short channel MOST with moderate voltage gain also the nonlinear output conductance and cross modulation terms play a big role.…”

Section: A Lna Modelingmentioning

confidence: 92%

A multi-step P-cell for LNA design automation

Cheng

Annema

Nauta

2008

2008 IEEE International Symposium on Circuits and Systems (ISCAS)

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Abstract-This paper presents a novel way to efficiently implement parametric cells (P-cells). A narrow-band LNA is used as demonstration vehicle. In the P-cell, circuit parameters such as transistor size, bias condition and passive values are determined automatically for any given reachable target performance. To achieve both high accuracy and relatively high speed, a new iterative stepped approach is used with respect to speed and accuracy, starting with moderate-accuracy and fast optimization that yields the starting point for the next higheraccuracy and slower optimization step. The presented approach can be extended to other types of circuits.

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Section: A Lna Modelingmentioning

confidence: 92%

A multi-step P-cell for LNA design automation

Cheng

Annema

Nauta

2008

2008 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…In order to model linearity, several techniques are reported in literature [22,23], the most popular among them is the third-order intercept (IP3) approach [24]. Therefore in this work, IP3 has been used; it can be evaluated from the known fundamental power P fund and third order inter-modulation power P IM3 when the signal having two tons of frequency f 1 and frequency f 2 , respectively, is applied.…”

Section: Tablementioning

confidence: 99%

“…Using (2)-(5) the FoM LNA for two SOI designs can be calculated, and their values are summarized in Table 3. By comparing simulation results of FoM LNA with limited available experimental data [23] with a 0.180 mm bulk technology was given in Table 3. It can be seen from Table 3 that FoM LNA for LNA designed using a new underlap DG SOI gives a two-fold improvement as compared with experimental data [23] whereas with SG configuration a much higher FoM LNA was observed, that could be attributed to higher value of G and IP3 in DG underlap LNA.…”

Section: Figure-of-merit For Lnamentioning

confidence: 99%

Inter-modulation linearity investigation of an optimally designed and optimally biased LNA for wireless LAN

Singh

Alam

2015

Radioelectron.Commun.Syst.

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This paper presents the effects of process parameters variations of new underlap SOI MOSFETs (underlap SOI technology with spacer covered) on linearity investigation of cascode low noise amplifier (LNA) for wireless LAN application. By quantifying the linearity of the LNA in-terms of third order intercept (IP3), the paper presents guidelines for optimum value of spacer s, film thickness T Si doping gradient d and gate length L G of the underlap device for linearity enhancement of the LNA. Based on a new Figure-of-Merit of LNA (FoM LNA ) involving available signal power gain G, IP3, noise figure (NF) and dc power consumption P dc , it has been found that FoM LNA in double gate (DG) configuration is much higher than single gate (SG) one at the optimum gate overdrive V OD = 75 mV. This is due to a combined effect of higher value of G and IP3 in the DG configuration. By comparing with limited available experimental data of 0.18 mm bulk technology, it has been found that using new underlap SOI MOSFETs with gate length of L G = 60 nm (effective gate length L eff = 92 nm) optimally designed and optimally biased LNA gives almost two times improvement in the proposed FoM LNA . With optimal bias the LNA achieved the following indicators: NF~2.27 dB, IP3~+7.75 dBm, G~20.86 dB and power consumption equal to 2.5 mW.

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“…Therefore, for analyzing the nonlinear behavior of RF circuits, modeling and describing transistor nonlinearity is essential. Taylor series are successfully and dominantly used to describe the weakly nonlinear behavior of the MOS transistor [1][2][3][4][5]. However, most of these descriptions simplify the MOS nonlinearity model to the following extent:…”

Section: Mos Transistor Nonlinearity Modelingmentioning

confidence: 99%

“…One of the important design specifications of the LNA is its distortion performance, typically specified in terms of IIP2 and IIP3. A number of papers present nonlinearity analyses for LNAs to provide design guidelines [1][2] or for LNA design automation purposes [3][4]. Volterra series theory is widely used as the major nonlinearity analysis approach [5].…”

Section: Introductionmentioning

confidence: 99%

A general weak nonlinearity model for LNAs

Cheng

Annema

Croon

et al. 2008

2008 IEEE Custom Integrated Circuits Conference

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Abstract-This paper presents a general weak nonlinearity model that can be used to model, analyze and describe the distortion behavior of various low noise amplifier topologies in both narrowband and wideband applications. Represented by compact closed-form expressions our model can be easily utilized by both circuit designers and LNA design automation algorithms. Simulations for three LNA topologies at different operating conditions show that the model describes IM components with an error lower than 0.1% and a one order of magnitude faster response time. The model also indicates that for narrowband IM2@w 1 -w 2 all the nonlinear capacitances can be neglected while for narrowband IM3 the nonlinear capacitances at the drain terminal can be neglected.

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Distortion in RF CMOS short-channel low-noise amplifiers

Cited by 43 publications

References 37 publications

A multi-step P-cell for LNA design automation

A multi-step P-cell for LNA design automation

Inter-modulation linearity investigation of an optimally designed and optimally biased LNA for wireless LAN

A general weak nonlinearity model for LNAs

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