Distortion in RF CMOS Short Channel Low Noise Amplifiers

Baki, R.A.; Tsang, T.K.K.; El-Gamal, M.N.

doi:10.1109/newcas.2005.1496667

Cited by 12 publications

(16 citation statements)

References 34 publications

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“…A ω is the linear transfer function for the input voltage of gs v , ( ,2 ) ε ω ω Δ shows how the collector current nonlinearities contribute to its IMD 3 response, ( ) g ω Δ and (2 ) g ω are the conductance functions defined at the sub-harmonic 1 2 ( ) ω ω − and the second harmonic (2 ) ω frequencies. As can be seen from (2), if 3 g is made negligibly small (by linearisation), ( ,2 ) ε ω ω Δ becomes dominated by 0B g which is proportional to the square of 2 g that represents the strength of the second-order nonlinearity.…”

Section: ( )mentioning

confidence: 99%

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Harmonic and IMD frequency components affecting nonlinear distortion with feed back in MOSFET amplifiers

Abuelmaatti

Thayne

Abuelma’atti

2008

APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems

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In some low power wireless systems, such as ZigBee, a single amplifier can be designed to perform the functions of both the front end's Low Noise Amplifier and Power Amplifier. Such an amplifier, usually a very low power one, would lack highly effective, usually high power consuming, linearization techniques but also suffer from linearity issues associated with high power operation. One of these issues is the generation of extra intermodulation components through feeding back several frequency components produced from different orders of nonlinearity. These effects worsen as the operating power increases. This phenomenon is extensively investigated in this work by analyzing the effect of feeding back frequency components generated from all orders of nonlinearity up to 7 thorder on the generation of 3 rd , 5 th and 7 th -order intermodulation products. The analysis, based on polynomial substations, reveals previously unknown components which can significantly affect nonlinear performance at higher-than-usual input powers. The investigation assumes a CMOS amplifier. All polynomial substitutions were performed in the mathematics software, Mathematica.

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Section: ( )mentioning

confidence: 99%

“…The concept of generating intermodulation products by feeding back frequency components produced from different orders of nonlinearity has often been discussed in the literature, examples include [1] and [2].…”

Section: Introductionmentioning

confidence: 99%

Harmonic and IMD frequency components affecting nonlinear distortion with feed back in MOSFET amplifiers

Abuelmaatti

Thayne

Abuelma’atti

2008

APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems

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“…The reason behind the linearity degradation is that the transistors are forced to operate close to the triode region (i.e. close to V ds−sat ) as the supply voltage decreases [47].…”

Section: Low-voltage and Low-power Circuit Techniquesmentioning

confidence: 99%

Current status of CMOS low voltage and low power wireless IC designs

Tsang

El-Gamal

Iniewski

et al. 2007

Analog Integr Circ Sig Process

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This paper surveys recent research on CMOS low voltage and low power IC designs for wireless applications. Advancements and challenges in using nanometer IC processes are addressed, and the impacts of device scaling on wireless systems are discussed. Recent advances in device technologies and system architectures are presented. Stateof-the-art low power wireless systems, both from academia and from industry, are summarized. Circuit design techniques and challenges for low voltage and low power applications are discussed, along with RF performance and power trade-offs. Examples of common RF building blocks, e.g. LNA's and VCO's, designed for sub-1V power supplies are presented.

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“…It can be applied for estimating the distortion of a circuit, as well as for determining the primary sources of distortion within the circuit. This type of analysis has been applied to various circuits such as low noise amplifiers [4], mixers [5] and a number of amplifier topologies [1,6].…”

Section: Introductionmentioning

confidence: 99%

“…The Chebyshev series approach solves the convergence issues associated with Taylor expansions and, in addition, it results in much smaller approximation errors, as will be proven in Sect. 4. The Chebyshev series already finds use in several applications in modern technology, such as in the numerical analysis of RF circuits [9].…”

Section: Introductionmentioning

confidence: 99%

Large and small signal distortion analysis using modified Volterra series

Sarkas

Mavridis

Papamichail

et al. 2007

Analog Integr Circ Sig Process

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A new approach to the Volterra analysis of analog circuits is presented. Volterra analysis is widely used for the calculation of harmonic and intermodulation distortion products. However, the analysis is limited to circuits experiencing small signal excitations and becomes inaccurate when the input signal amplitude increases, especially when MOS transistors are involved. In this paper, we analyze the cause of this drawback, which is no other than the Taylor series' convergence properties. Moreover, we propose a solution, by calculating the nonlinearity coefficients using a different type of polynomial expansion, the Chebyshev series. This replacement improves significantly the capabilities of Volterra analysis. We also present results comparing Chebyshev series with other types of polynomial expansions. Finally, we apply the proposed method to analyze the intermodulation distortion (IMD) of a CMOS RF power amplifier, both in the small and the large signal regimes.

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Distortion in RF CMOS Short Channel Low Noise Amplifiers

Cited by 12 publications

References 34 publications

Harmonic and IMD frequency components affecting nonlinear distortion with feed back in MOSFET amplifiers

Harmonic and IMD frequency components affecting nonlinear distortion with feed back in MOSFET amplifiers

Current status of CMOS low voltage and low power wireless IC designs

Large and small signal distortion analysis using modified Volterra series

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