Distortion in elementary transistor circuits

Sansen, Willy

doi:10.1109/82.754864

Cited by 214 publications

(70 citation statements)

References 5 publications

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“…The increase of linearity when using GC devices is related to the increased g m , caused by the effective channel length reduction, promoted by the GC channel engineering and reduced g D , since m D g g THD ∝ (19). In the case where devices with the same L eff are used, the total harmonic distortion is also expected to decrease, due to the reduced g D of GC transistors in comparison to standard ones, as mentioned before.…”

Section: Resultsmentioning

confidence: 90%

Channel Length Influence on the Performance of Source-Follower Buffers Implemented with Graded-Channel SOI nMOSFETs

2008

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This work presents an evaluation of the influence of channel length on the performance of graded-channel (GC) SOI nMOSFETs operating as source-follower buffers. Experimental data is used to compare the buffer gain and linearity of GC and standard SOI nMOS transistors for different mask channel lengths and similar effective channel length. Two-dimensional numerical simulations were also performed, showing that the gain of buffers implemented with GC devices remains close to the theoretical limit even when short-channel devices are used. The simulated results indicate that the length of a source-follower buffer using GC devices can be reduced by a factor of 5, in comparison with the standard counterpart, without gain degradation or linearity worsening.

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Section: Resultsmentioning

confidence: 90%

Channel Length Influence on the Performance of Source-Follower Buffers Implemented with Graded-Channel SOI nMOSFETs

2008

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“…The CMUT can be considered to exhibit weak nonlinearity since the harmonic distortion is a smooth function of input signal amplitude and gradually disappears as the input signal gets smaller and smaller [27]. Therefore the system dynamics can be represented as a Volterra series relationship between input signal and output pressure.…”

Section: Large Signal Cmut Behavior: Phase Analysismentioning

confidence: 99%

Phase and Amplitude Modulation Methods for Nonlinear Ultrasound Imaging With CMUTs

Satır

Degertekin

2016

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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Conventional amplitude and phase modulated pulse sequences for selective imaging of nonlinear tissue and ultrasound contrast agents are designed for piezoelectric transducers that behave linearly. Inherent nonlinearity of CMUTs, especially during large signal operation, renders these methods inapplicable. In this work we present different pulse sequences for nonlinear imaging that are valid for small- and large-signal CMUT operation. For small-signal operation, two-pulse amplitude and phase modulation methods for microbubble and tissue harmonic imaging are presented, where CMUT nonlinearity is compensated via subharmonic excitation. In the large-signal regime, using a nonlinear model we first show that there is a simple linear relationship between the phases of each harmonic distortion component generated and the input drive signal. Based on this observation, we demonstrate a pulse sequence using N+1 consecutive phase modulated transmit events to extract N harmonics of the nonlinear contrast agent echo content uncorrupted by CMUT nonlinearity. Proposed methods assume no a priori information about the transducer, therefore are applicable to any CMUT. The phase modulation method is also valid for piezoelectric transducers and systems with nonlinearities described by Taylor series where same phase relationship between the input signal and the harmonic content is valid. Proof of principle experiments using a commercial contrast agent validate the phase modulated pulse sequences for CMUTs operating in highly nonlinear collapse snapback mode and for piezoelectric transducers.

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“…4(a), can potentially achieve high (NSNR) when compared to other alternatives [17]. However, for low loop gain, the square-law term of a MOSFET can be problematic as it indirectly generates third-order distortion [18], [21]. To understand this intuitively, for simplicity of explanation, assume that MOS transistors are ideal square law devices.…”

Section: Improving Cmos Transconductor Linearity -Resistive Sourmentioning

confidence: 99%

“…A similar effect happens in the degenerated PMOS transistor and when the two outputs currents are added, the degenerated CMOS inverter can have more third-order distortion than a CMOS inverter under the same biasing conditions. This may be a key reason for the rather rare use of degeneration in MOS based LNTAs, where the available loop gain is limited at RF [18], [21].…”

Section: Improving Cmos Transconductor Linearity -Resistive Sourmentioning

confidence: 99%

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RF Transconductor Linearization Robust to Process, Voltage and Temperature Variations

Subramaniyan

Klumperink

Srinivasan

et al. 2015

IEEE J. Solid-State Circuits

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Software-defined radio receivers increasingly exploit linear RF V-I conversion, instead of RF voltage gain, to improve interference robustness. Unfortunately, the linearity of CMOS inverters, which are often used to implement V-I conversion, is highly sensitive to Process, Voltage and Temperature variations. This paper proposes a more robust technique based on resistive degeneration. To mitigate third-order IM3 distortion induced by the quadratic MOSFET I-V characteristic, a new linearization technique is proposed which exploits a floating battery by-pass circuit and replica biasing to improve IIP3 in a robust way. This paper explains the concept and analyzes linearity improvement. To demonstrate operation, an LNTA with current domain mixer is implemented in a 45 nm CMOS process. Compared to a conventional inverter based LNTA with the same transconductance, it improves IIP3 from 2 dBm to a robust P IIP3 of 8 dBm at the cost of 67% increase in power consumption.Index Terms-CMOS, cognitive radio receiver, figure-of-merit, IIP3, linearity, linearization, multi-band receiver, negative feedback, process voltage temperature (PVT) variations, receiver, reconfigurable receiver, robust circuit design, SAW-less receiver, software-defined receiver, software-defined radio, transconductor, wideband receiver.

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Distortion in elementary transistor circuits

Abstract: In this paper the distortion components are defined for elementary transistor stages such as a single-transistor amplifier and a differential pair using bipolar transistors or MOST's. Moreover, the influence of feedback is examined. Numerical examples are given for sake of illustration.

Cited by 214 publications

References 5 publications

Channel Length Influence on the Performance of Source-Follower Buffers Implemented with Graded-Channel SOI nMOSFETs

Channel Length Influence on the Performance of Source-Follower Buffers Implemented with Graded-Channel SOI nMOSFETs

Phase and Amplitude Modulation Methods for Nonlinear Ultrasound Imaging With CMUTs

RF Transconductor Linearization Robust to Process, Voltage and Temperature Variations

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