2020
DOI: 10.1016/j.jssc.2020.121722
|View full text |Cite
|
Sign up to set email alerts
|

Distinct role of Sn and Ge doping on thermoelectric properties in p-type (Bi, Sb)2Te3-alloys

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 15 publications
(5 citation statements)
references
References 51 publications
0
5
0
Order By: Relevance
“…Band engineering approaches in TE materials, such as resonant level doping, electronic band convergence, and band curvedness, have improved the power factor. When the energy level of the dopant is close to the valence band or conduction band, this circumstance may result in adding extra energy levels to the host band, resulting in a distortion of the electronic DOS that is known as resonant doping [ 195 , 196 , 197 ]. This distortion may modify the DOS when the Fermi level is close to the resonant state, which increases the density of states without changing the carrier concentration significantly, resulting in a significant increase in the Seebeck coefficient, as demonstrated in Equation (6) [ 198 ].…”
Section: Improvement Strategies For Thermoelectric Materials Performancementioning
confidence: 99%
“…Band engineering approaches in TE materials, such as resonant level doping, electronic band convergence, and band curvedness, have improved the power factor. When the energy level of the dopant is close to the valence band or conduction band, this circumstance may result in adding extra energy levels to the host band, resulting in a distortion of the electronic DOS that is known as resonant doping [ 195 , 196 , 197 ]. This distortion may modify the DOS when the Fermi level is close to the resonant state, which increases the density of states without changing the carrier concentration significantly, resulting in a significant increase in the Seebeck coefficient, as demonstrated in Equation (6) [ 198 ].…”
Section: Improvement Strategies For Thermoelectric Materials Performancementioning
confidence: 99%
“…49 This situation may lead to adding additional energy states to the host band, creating a distortion known as resonant doping. 133,134 When the Fermi level lies near the resonant state, significant enhancement in m* occurred due to the increased density of states, therefore, the Seebeck coefficient increased without changing carrier concentration. 128 Schematic illustrations of resonant states 135 show a high density of states, as shown in Fig.…”
Section: Achieving Resonant State To Increase Seebeck Coefficientmentioning
confidence: 99%
“…The wider band gap of Bi 14 Te 13 S 8 compared to Bi 2 Te 3 allows for reduction of the bipolar effect which deteriorates the performance of this compound at temperatures higher than 400 K, due to a reduction in thermopower. Several efforts have been made to suppress the effect of minority charges in Bi 2 Te 3 -based compounds by tuning the carrier concentration , and widening the band gap. Record thermoelectric efficiencies have been achieved for Bi 2 Te 3 , alloyed with Sb and Se. , However, the necessity for high-performance materials at temperatures over 500 K persists …”
Section: Introductionmentioning
confidence: 99%
“…Bi 2 Te 3 -based compounds are pioneer thermoelectric materials for room-temperature applications, and many attempts have been made to improve their efficiency over a wide temperature range. Several key strategies that stand out include optimization of the charge carrier concentration; , widening the band gap to suppress the bipolar effect; enhancing the thermopower and thermal conductivity by alloying Bi 2 Te 3 with Sb and Se; , nanostructuring to reduce the thermal conductivity; , and utilizing the convergence of electronic bands in alloys to further increase the zT . Significant progress on all fronts has led to record zT values for Bi 2 Te 3 -based compounds.…”
Section: Introductionmentioning
confidence: 99%