Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

Zeng, Li; Cao, Juexian; Helgren, E.; Karel, Julie; Arenholz, Elke; Ouyang, Lu; Smith, David J.; Wu, Ruqian; Hellman, F.

doi:10.1103/physrevb.82.165202

Cited by 32 publications

(30 citation statements)

References 50 publications

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“…These produced interesting low-temperature properties, such as the field-induced insulator-to-metal transition in Gd-doped a-Si [77,78]. However, only Mn-doped a-Ge yielded a magnetic ground state where a spin glass transition was observed below 10 K [79]. There were distinct differences in the magnetic moment produced when Mn doping a-Si compared to a-Ge.…”

Section: Transition Metal Doping Of Amorphous Silicon and Germaniummentioning

confidence: 93%

“…In references [77][78][79], electron-beam co-evaporation of a transition metal or rare earth elements and Si or Ge produced homogeneously doped amorphous silicon (a-Si) or amorphous Ge (a-Ge) thin films. The growth process of these films included a capping layer to help avoid oxidation of the impurities.…”

Section: Transition Metal Doping Of Amorphous Silicon and Germaniummentioning

confidence: 99%

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Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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The efforts over the past decade to identify and characterize magnetic semiconducting systems that would be compatible with present-day silicon technologies are reviewed. Investigations that have explored transition metal doping of the group IV semiconductors silicon and germanium are discussed along with intermetallic compounds such as silicides and germanides that may play the role of a magnetic semiconducting source of polarized electrons. Thin films and nanostructures of these materials have been grown by a number of synthesis techniques, and the resulting structural properties, including the important issue of homogeneity of dopants, are critically surveyed. The resulting magnetic and carrier transport properties are also reviewed. List of Abbreviations

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Section: Transition Metal Doping Of Amorphous Silicon and Germaniummentioning

confidence: 93%

Section: Transition Metal Doping Of Amorphous Silicon and Germaniummentioning

confidence: 99%

Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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“…In Ref. [22], it was shown that, despite the amorphous structure, Mn in a-Si can be found in a relatively well-defined high coordination interstitial site, displaying broadened d bands, low moment, and n-type carriers. Interesting results have also been reported in Ref.…”

Section: Introductionmentioning

confidence: 99%

“…Two relatively recent studies [22,23] have pointed out the importance of Mn coordination in connection with the magnetic properties of Mn in a silicon matrix. In particular, by combining theory and experiments the attention has been drawn on possible quenching effects of the Mn magnetic moment.…”

Section: Introductionmentioning

confidence: 99%

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

Drera

Mozzati

Colombi³

et al. 2015

Thin Solid Films

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“…It was predicted a decade ago that Mn-doped Ge might present the field-controlled ferromagnetism [8][9][10][11] of a dilute magnetic semiconductor (DMS), which has lead to a sizeable number of studies presenting a wide range of T C between 5 K and 400 K [10][11][12][13][14][15][16][17][18][19][20][21][22] . Figure 1 summarizes some of the recently studied Mn-Ge materials and T C is used as a general signature of their magnetic properties [10][11][12][13][14][15][16][17][18][19][20][21][22] .…”

Section: Introductionmentioning

confidence: 99%

Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties

et al. 2014

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o 0 10 15 20 sample number Figure 1: Compendium of literature data of Curie temperatures for Ge -Mn thin films and nanostructures fabricated using a wide range of deposition methods. This is by no means a complete list but illustrates the breadth in growth methods and magnetic performance which has been reported in recent years. ABSTRACTThe magnetic doping of Ge-QDs is highly coveted and has been pursued for several years. The Ge-Mn-Si substrate system presents a complex challenge, and the competition between dopant integration and formation of silicides, germanides and metastable phases makes the magnetic doping a considerable, and maybe insurmountable challenge. We will discuss the interaction of Mn with all growth surface, Si(100), Ge(100) wetting layer, and Ge{105} QD facet, as well as the co-deposition of Mn and Ge. The monoatomic Mn-wires, which form on Si(100), and their magnetic signatures allow unique insight into the relation between bonding and magnetism. We will close with an outlook on the feasibility of QD manipulation by controlling dopant-surface interactions. KEYWORD LISTGe-quantum dot, doping, spintronics, germanide, Scanning tunneling microscopy, metastable phase, dilute magnetic semiconductor, ferromagnetism. Curie temperature

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Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

Cited by 32 publications

References 50 publications

Si-Based Magnetic Semiconductors

Si-Based Magnetic Semiconductors

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties

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