Abstract:We investigated the annealing behavior of hydrogen in a high-dose hydrocarbon-molecularion-implanted silicon during rapid thermal annealing (RTA). Gettering sinks in the high-dose hydrocarbon-molecular-ion-implanted region are formed not only at carbon-related defects but also at defects related to the amorphous layer after RTA. The concentration of hydrogen trapped by the defects was analyzed by secondary ion mass spectrometry (SIMS). As a result, the concentration of hydrogen trapped by the amorphous-related… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.