Abstract:<p>Hydrogenated amorphous silicon is a well known detector material for its radiation resistance. This study concern 10 µm thickness, p-i-n and charge selective contacts planar diode detectors which were irradiated with neutrons at two fluence values: 10<sup>16</sup> n<sub>eq</sub>/cm<sup>2</sup> and 5 x 10<sup>16</sup> n<sub>eq</sub>/cm<sup>2</sup>. In order to evaluate their radiation resistance, detector leakage current and respon… Show more
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