Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation

Bessia, Fabricio Alcalde; Pérez, Martín; Sofo-Haro, Miguel; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, Pablo Daniel; Berisso, M. Gómez; Lipovetzky, J.

doi:10.1109/tns.2018.2874191

Cited by 14 publications

(8 citation statements)

References 35 publications

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“…FOXFETs are fabricated in a 0.5‐

\umu

m CMOS process which, on top of the polysilicon gate, have a

\simeq

0.5‐

\umu

m borophosphosilicate glass (BPSG) layer, which is used with chemical–mechanical polishing during fabrication to planarize the silicon wafer before growing the metal layers. BPSG has generally a 3% in weight of natural boron, which has been reported to capture thermal neutrons causing single event effects in CMOS circuits or displacement damage in CMOS image sensors 48 …”

Section: Discussionmentioning

confidence: 99%

“…BPSG has generally a 3% in weight of natural boron, which has been reported to capture thermal neutrons causing single event effects in CMOS circuits or displacement damage in CMOS image sensors. 48 We repeated the GEANT4 simulations of front and back irradiation adding the BPSG layer on top of the PolySilicon gate of the FOXFETs. The dose obtained on the FOXFET layer was negligible compared to the dose on the FOXFET when the thinnest 3-μm CL was applied.…”

Section: Effect Of Boron Present In the Foxfet On Neutron Sensitivitymentioning

confidence: 99%

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Neutron‐gamma dosimetry for BNCT using field oxide transistors with gadolinium oxide as neutron converter layer

et al. 2021

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A new type of electronic dosimeter is presented, capable of discerning between the doses of gamma photons and neutrons in a mixed beam as found in boron neutron capture therapy (BNCT). We introduce a real-time dosimeter based on a thick gate field oxide field effect transistor (FOXFET) covered with a neutron converter layer containing gadolinium. Methods: To sensitize the FOXFET dosimeter to neutron fluxes, a converter layer containing gadolinium oxide particles embedded in photoresines was deposited over the sensor surface. Mixed neutron-gamma field configurations with different neutron energy spectra were used to assess the FOXFET response, considering different thicknesses of the neutron converter layer. Results: The total gamma sensitivity of the devices resulted to be 43 mV/Gy. The responses of sensors with different converter layer thicknesses irradiated with different neutron spectra are simulated using GEANT4 code. The response to photons is not significantly modified with thin conversion layers when used in water medium. Conclusions: A real-time dosimeter comprising a pair of FOXFET sensorsonly one of them with a gadolinium neutron converter layer-allows the simultaneous measurement of gamma dose and neutron flux during BNCT irradiations.

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“…FOXFETs are fabricated in a 0.5‐

\umu

m CMOS process which, on top of the polysilicon gate, have a

\simeq

0.5‐

\umu

Section: Discussionmentioning

confidence: 99%

Section: Effect Of Boron Present In the Foxfet On Neutron Sensitivitymentioning

confidence: 99%

Neutron‐gamma dosimetry for BNCT using field oxide transistors with gadolinium oxide as neutron converter layer

et al. 2021

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“…The integrated circuit used in this work is the APTINA MT9M001, which is a 1/2-inch CMOS monochrome active-pixel image sensor composed by 1280 × 1024 pixels with 5.2 𝜇m × 5.2 𝜇m pitch [24]. The sensor active area is covered with approximately 3.7 𝜇m of metal layers -embedded in an inter-metal dielectric-, and a layer of approximately 3.8 𝜇m of polymers which form the micro-lenses of each pixel [13].…”

Section: The Cmos Sensorsmentioning

confidence: 99%

“…There are difficulties to place neutron detectors based on semiconductor into reactor pools: On one hand, most of the devices used in NR are sensitive to gamma rays, this hinders their use in underwater facilities because the samples and the reactor core generates high fluxes of photons which can produce a high undesirable counting rate, and a subsequent detector saturation. On the other hand, the high doses of thermal neutrons and gamma photons present in these environments would produce serious damage in semiconductor detectors, reducing considerably its lifespan [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Neutron Imaging Based on Transfer Foil Activation and COTS CMOS Image Sensors

Pérez,

Abbate,

Lipovetzky

et al. 2022

Preprint

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In this paper we present a method for obtention of neutron images with Commercial-Off-The-Shelf (COTS) CMOS image sensors through the activation of indium foils. This detection method has been designed specifically for the acquisition of thermal and epitermal neutron images in mixed beams with a high gamma flux, and also for the study of high radioactive samples that are usually placed into research reactor pools. We also present a technique to obtain multi-spectral neutron images taking advantage of the high neutron absorption cross-section of this material in the thermal energy range, as well as around the 1.45 eV resonance. Measurements performed in a neutron beam of the RA6 nuclear research reactor located in Bariloche, Argentina, confirm the capability of the proposed technique.

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“…There are difficulties to place neutron detectors based on semiconductor into reactor pools: on one hand, most of the devices used in NR are sensitive to gamma rays, this hinders their use in underwater facilities because the samples and the reactor core generates high fluxes of photons which can produce a high undesirable counting rate, and a subsequent detector saturation. On the other hand, the high doses of thermal neutrons and gamma photons present in these environments would produce serious damage in semiconductor detectors, reducing considerably its lifespan [13][14][15].…”

Section: Jinst 17 P02004mentioning

confidence: 99%