Dispersive table-based large-signal FET model validated in analysis of MMIC frequency doubler

Int J RF and Microwave Comp Aid Eng

et al. 2005

Theoretical and practical issues concerning the nonlinear dynamic modelling of electron devices are discussed in this article. All the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation. In particular, both the "fast" dynamics associated with charge-storage phenomena at high operating frequencies and the "slow" dynamics of low-frequency dispersion, due to device self-heating and "charge-trapping" effects in deepbulk and surface regions, are simultaneously taken into account. The result is an empirical, technology-independent and nonquasi-static model of electron devices, suitable for a simple and reliable identification procedure and based on conventional measurements of static characteristics and bias-and frequency-dependent small-signal parameters. The model implementation in the framework of commercially available CAD tools is also outlined in this article. Experimental validation, based on a GaAs p-HEMT, is also presented.

Section: Experimental Validationsupporting

confidence: 55%

Section: Nonlinear Modelling Of "Slow" Dynamic Phenomenamentioning

confidence: 98%

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Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena

Filicori

Int J RF and Microwave Comp Aid Eng

et al. 2005

“…Vannini is with the Department of Engineering, University of Ferrara, Ferrara 44100, Italy (e-mail: gvannini@ing.unife.it). also at microwave and millimeter-wave frequencies, especially when nonlinear operation is involved [1]- [4]. This issue, sometimes ignored in the past years, has proved as extremely important in the context of empirical modeling of electron devices for monolithic microwave integrated circuit (MMIC) design.…”

mentioning

confidence: 99%

“…Many efforts have been made by several research groups to take into account LF dispersion in both lookup-table-based and equivalent circuit models [4]- [14]. In this paper, an accurate empirical large-signal model is proposed, for the prediction of the device drain -behavior, under dynamic operation above the cutoff frequencies of dispersive phenomena.…”

mentioning

confidence: 99%

Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects

Raffo

IEEE Trans. Microwave Theory Techn.

et al. 2005

Abstract-Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i.e., surface state densities and bulk spurious energy levels) must be taken into account in the large-signal dynamic modeling of III-V field-effect transistors when accurate performance predictions are pursued, since these effects cause important deviations between direct current (dc) and dynamic drain current characteristics. In this paper, a new model for the accurate characterization of these phenomena above their cutoff frequencies is presented, which is able to fully exploit, in the identification phase, large-signal current-voltage ( -) measurements carried out under quasi-sinusoidal regime using a recently proposed setup.

Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup

Raffo

Int J RF and Microwave Comp Aid Eng

et al. 2005

Low-frequency dispersive phenomena due to self-heating and/or "traps" (that is, surface-state densities and deep-level traps) cause important dynamic deviations in the I/V characteristics of III-V devices and they must be taken into account when an accurate large-signal dynamic model is needed. To this end, different low-frequency dispersive I/V models have been proposed by the research community and, quite often, a characterization based on pulsed I/V measurement systems has been suggested as the most appropriate for the identification of model parameters. Unfortunately, besides requiring special-purpose setups, pulsed characterization may suffer from some drawbacks, as discussed in this article. As an alternative, a simple large-signal measurement setup is presented here, which is based on low-frequency sinusoidal excitations and can be easily implemented by means of conventional general-purpose laboratory instrumentation. The proposed setup is successfully adopted in this article to identify the dispersive I/V characteristics of a GaAs PHEMT large-signal model providing excellent prediction of intermodulation distortion at Ka-band frequencies.