Dispersive optical constants and electrical properties of nanocrystalline CuInS2 thin films prepared by chemical spray pyrolysis

Proton Ion Irradiation on As40Se50Sb10 Thin Films: Fluence-Dependent Tuning of Linear–Nonlinear Optical Properties for Photonic Applications

“…The relation between refractive index ( n ) and lattice dielectric constant (ε L ) can be expressed according to the Spitzer–Fan model as where “ e ” is the electronic charge, “ε 0 ” is the permittivity of free space, and “ N / m *” is the ratio between the number of charge carriers to their effective masses. These parameters were obtained by considering the lattice vibrational modes and free-electron charge carriers of a system . The plot between n 2 and λ 2 is shown in Figure d whose linear fitting provides the value of ε L and N / m * from their intercept and slope, respectively.…”

“…These parameters were obtained by considering the lattice vibrational modes and freeelectron charge carriers of a system. 51 The plot between n 2 and λ 2 is shown in Figure 2d whose linear fitting provides the value of ε L and N/m* from their intercept and slope, respectively. It can be observed from Table 1 that the values of the zero frequency dielectric constant (ε ∞ ) and the lattice dielectric constant (ε L ) almost complement each other, which justifies the dielectric properties of the material.…”

Numerical investigation on the role of ZnTe back surface layer in an efficient CuInS2 thin film solar cell

“…However, the adjustable electronic and optical properties are the main reason for the chalcopyrite I-III-VI 2 structured compounds to accustom itself to a vast amount of researchers and from this group, Copper indium disulfide (CuInS 2 ) material has reached in the apex of its popularity for obtaining some qualities like high absorption coefficient of 10 5 cm −1 and very much amiable with the environment [11][12][13][14]. In the recent years, the production of ternary compounds CuInX 2 (X = S, Te, Se) thin layers have been developed considerably and treated as active semiconductors for optoelectronic applications.…”

“…The determination of the defect make-up and the stoichiometry relies on the Cu/In/S ratio which is instigated by the deposition method. In another word, the structural, electrical, optical and morphological behavior are dependable on the fabrication, formation and post deposition dealing conditions [14]. By using CuInS 2 material, almost 11.4%-12.5% efficiency has been delineated by the researchers [19,27,28].…”