“…Ge-based, group IV, on-chip platforms have attracted significant attention for nonlinear applications in the mid-IR thanks to the strong nonlinearity and the transparency of Ge across the entire mid-IR band (2-15 µm) [18]. These platforms include Ge-on-SOI [19], Ge-on-Si [18,20], low (<40%) [21,22], and high (>40%) [23] Ge content SiGe-on-Si. Our SiGe-on-Si platform, with around 40% of Ge in the SiGe alloy, offers a good trade-off between nonlinear performances and low propagation loss for the associated waveguides in the mid-IR band [24].…”