Dispersion of polar optical phonons in wurtzite quantum wells

Komirenko, S. M.; Kim, Ki Wook; Stroscio, Michael A.; Dutta, Mitra

doi:10.1103/physrevb.59.5013

Cited by 160 publications

(190 citation statements)

References 11 publications

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“…Thus, the phonon frequency bands of wurtzite SLs reduce to the phonon branches of wurtzite QWs. For example, the frequency of IO L modes of the SLs approaches 71.67 meV as k t d 1 → 10, which is just the same as the IO phonon limited frequency in GaN/AlN QWs [25,27,29]. Similarly, the QC i−ii modes in the SLs will reduce to the analogous behaviors of PR phonon modes in GaN/Al 0.15 Ga 0.85 N QWs [26].…”

Section: Numerical Results and Discussionmentioning

confidence: 54%

“…On the contrary, they correspond to the decaying ones when ζ i (ω) > 0 [26][27][28]. Taking into account the oscillating or decaying waves in n-layers of some unit cell in the complex bases SL structures, it can be confirmed that 2 n types of polar phonon modes are likely to exist in wurtzite GaN-based SLs with n-layer complex bases.…”

Section: -3mentioning

confidence: 74%

“…Table 1. Zone-center energies (in meV) of polar optical phonons, dielectric constants of wurtzite GaN, Al0.15Ga0.85N and AlN materials [26,27,34]. Before analyzing the dispersive properties of phonon modes, let us first discuss the frequency ranges of the possible phonon modes in wurtzite SL systems with three-layer GaN/Al 0.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

“…In order to get a clear picture for the dispersive behaviors of the types of polar optical phonon modes in wurtzite complex bases SL systems, an application of the present theories based on a nitride SL with GaN/Al 0.15 Ga 0.85 N/AlN three-layer complex bases is performed, and a numerical calculation of dispersive relationship is carried out. The material parameters used in our calculations are listed in table 1 [26,27,34]. Table 1.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

“…At room and higher temperatures, the electron-phonon interactions and scattering by optical phonons play a dominant role effecting various properties of polar semiconductor quantum heterostructures, including hot-electron relaxation rates, interband transition rates, room-temperature exciton lifetimes, and many other optical and transport properties [23,24]. Moreover, since nitride material usually crystallizes in the anisotropic hexagonal wurtzite structure, the crystal dynamical properties of nitride SLs are more complex due to anisotropy of the crystal structure in contrast to those of cubic crystals [25][26][27][28][29][30][31][32]. Hence, it is necessary and important to investigate the polar optical phonon modes in wurtzite GaN-based SL with complex bases.…”

Section: Introductionmentioning

confidence: 99%

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Polar optical phonon states and their dispersive spectra of a wurtzite nitride superlattice with complex bases: Transfer-matrix method

Zhang

2011

Physica E: Low-dimensional Systems and Nanostructures

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Based on the dielectric continuum model and transfer-matrix method, the completing polar optical phonon states in a wurtzite GaN-based superlattice (SLs) with arbitrary-layer complex bases are investigated. It is proved that 2 n types of phonon modes probably exist in a wurtzite nitride SL with n-layer complex bases. The analytical phonon states of these modes and their dispersive equations in the wurtzite GaN/AlxGa 1−x N SL structures are obtained. Numerical calculations on a three-layer GaN/Al 0.15 Ga 0.85 N/AlN complex bases SL are performed. Results reveal that there are interface optical (IO) phonon modes of one type only and four types of quasi-confined (QC) phonon modes in three-layer GaN/Al 0.15 Ga 0.85 N/AlN complex bases SLs. The dispersive spectra of phonon modes in complex bases SLs extend to be a series of frequency bands. The behaviors of QC modes reducing to IO modes are observed. The present theoretical scheme and numerical results are quite useful for analyzing the dispersive spectra of completing phonon modes and their polaronic effect in wurtzite GaN-based SLs with complex bases.

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Section: Numerical Results and Discussionmentioning

confidence: 54%

Section: -3mentioning

confidence: 74%

Section: Numerical Results and Discussionmentioning

confidence: 99%

Section: Numerical Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Polar optical phonon states and their dispersive spectra of a wurtzite nitride superlattice with complex bases: Transfer-matrix method

Zhang

2011

Physica E: Low-dimensional Systems and Nanostructures

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Polaronic exciton in a parabolic quantum dot

Senger

Bajaj

2003

Physica Status Solidi (b)

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A calculation of the variations of the energy and oscillator strength of the ground state of an exciton in an ionic quantum dot as a function of the dot size, using a parabolic confining potential and a variational approach, is presented. The strong exciton -phonon interaction is taken into account by using an effective potential between the electron and the hole as derived by Pollmann and Büttner. The values of the exciton binding energies calculated using this potential are compared with those obtained using statically screened Coulomb potential and are found to be considerably larger for all values of the quantum dot size. In small quantum dots, the electron -hole correlation is reduced as the single particle energies scale at a much faster rate than the interaction energy. This is manifested in the behavior of oscillator strength, which becomes less dependent on the form of the effective interaction as the quantum dot size is reduced.

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Polaron effects due to interface optical‐phonons in wurtzite GaN/AlN quantum wells

Zhu

Shi

2005

Physica Status Solidi (b)

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Considering the effects of the built-in electric field (BEF) induced by the spontaneous and piezoelectric polarizations of wurtzite GaN/AlN quantum wells (QW's), the polaron energy shift and the effective mass due to the electron interactions with the interface optical-phonons are investigated theoretically by means of Lee-Low-Pines variational approach. We find that the BEF has a remarkable influence on the polaron effects especially for a QW with well width d > 6 nm. The polaron energy shift increases slowly and its effective mass approaches to a constant if d is further increased. On the contrary, both the polaron energy shift and the effective mass decrease slowly with the increasing of d if the BEF is ignored.

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Dispersion of polar optical phonons in wurtzite quantum wells

Cited by 160 publications

References 11 publications

Polar optical phonon states and their dispersive spectra of a wurtzite nitride superlattice with complex bases: Transfer-matrix method

Polar optical phonon states and their dispersive spectra of a wurtzite nitride superlattice with complex bases: Transfer-matrix method

Polaronic exciton in a parabolic quantum dot

Polaron effects due to interface optical‐phonons in wurtzite GaN/AlN quantum wells

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