Dispersion force for materials relevant for micro- and nanodevices fabrication

Gusso, André; Delben, G. J.

doi:10.1088/0022-3727/41/17/175405

Cited by 54 publications

(23 citation statements)

References 43 publications

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“…Following the procedures described in [27], we use optical data of the absorption spectra for monocrystalline Si ranging from far infrared to x-ray [28], which were interpolated and numerically integrated using Eq. (7).…”

Section: Dispersion Forcesmentioning

confidence: 99%

Rigorous analysis of Casimir and van der Waals forces on a silicon nano-optomechanical device actuated by optical forces

et al. 2018

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Nano-optomechanical devices have enabled a lot of interesting scientific and technological applications. However, due to their nanoscale dimensions, they are vulnerable to the action of Casimir and van der Waals (dispersion) forces. This work presents a rigorous analysis of the dispersion forces on a nano-optomechanical device based on a silicon waveguide and a silicon dioxide substrate, surrounded by air and driven by optical forces. The dispersion forces are calculated using a modified Lifshitz theory with experimental optical data and validated by means of a rigorous 3D FDTD simulation. The mechanical nonlinearity of the nanowaveguide is taken into account and validated using a 3D FEM simulation. The results show that it is possible to attain a no pull-in critical point due to only the optical forces; however, the dispersion forces usually impose a pull-in critical point to the device and establish a minimal initial gap between the waveguide and the substrate. Furthermore, it is shown that the geometric nonlinearity effect may be exploited in order to avoid or minimize the pull-in and, therefore, the device collapse.

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Section: Dispersion Forcesmentioning

confidence: 99%

Rigorous analysis of Casimir and van der Waals forces on a silicon nano-optomechanical device actuated by optical forces

et al. 2018

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“…Based on what is mentioned in section 1, two interaction regimes can be defined: first, the large separation regime in which the Casimir force is dominant (typically above several tens of nanometers (Israelachvili and Tabor, 1972;Klimchitskaya et al, 2000;Bostrom and Sernelius, 2000)). Considering the ideal case, the Casimir interaction is proportional to the inverse fourth power of the separation (Gusso and Delben, 2008):…”

Section: 2 Work Of External Forcesmentioning

confidence: 99%

Modeling the size dependent pull-in instability of beam-type NEMS using strain gradient theory

Koochi

Sedighi

Abadyan

2014

Lat. Am. j. solids struct.

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It is well recognized that size dependency of materials characteristics, i.e. size-effect, often plays a significant role in the performance of nano-structures. Herein, strain gradient continuum theory is employed to investigate the size dependent pull-in instability of beam-type nano-electromechanical systems (NEMS). Two most common types of NEMS i.e. nano-bridge and nano-cantilever are considered. Effects of electrostatic field and dispersion forces i.e. Casimir and van der Waals (vdW) attractions have been considered in the nonlinear governing equations of the systems. Two different solution methods including numerical and Rayleigh-Ritz have been employed to solve the constitutive differential equations of the system. Effect of dispersion forces, the size dependency and the importance of coupling between them on the instability performance are discussed.

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“…An estimate of its size in ZnSe can be obtained from the recently calculated values for GaAs and Si [8]. They suggest cohesion equivalent to a pressure >18 atm at t ¼ 2 nm, decreasing as t À3 to 5 atm at t ¼ 3 nm.…”

Section: Microscopic Model Of Etching 31 Thin Mgs Layersmentioning

confidence: 99%

Determination of the etching mechanism in MgS and ZnMgSSe epitaxial lift‐off layers

Curran

Brown

Warburton

et al. 2010

Physica Status Solidi (b)

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During epitaxial lift-off of II-VI semiconductors a sacrificial layer of MgS is dissolved by acid. Here we show that the etching speed of this process varies inversely as the square root of the layer thickness, following a model developed previously for III-V lift-off where the rate limiting step in both cases is transport of insoluble product gases from the etching layer. We also propose a model to explain why sacrificial layer etching fails when strong cohesive forces resist the lifting of the epilayer. This occurs when the sacrificial layer is too thin or when it contains more than a critical amount of an insoluble component, cohesion arising from dispersion forces or chains of insoluble atoms, respectively. Our method follows the original procedure [6] for (Ga,Al)As structures with an etchable AlAs layer but it was not clear if the same lift-off mechanism operates in both cases. In section 2 we demonstrate that this is the case. In section 3, we suggest a new model to explain why the lift-off technique fails either if the etchable layer thickness, t is below a minimum value, or contains an insoluble component (either GaAs or Zn(S,Se)) above a critical concentration.

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Dispersion force for materials relevant for micro- and nanodevices fabrication

Cited by 54 publications

References 43 publications

Rigorous analysis of Casimir and van der Waals forces on a silicon nano-optomechanical device actuated by optical forces

Rigorous analysis of Casimir and van der Waals forces on a silicon nano-optomechanical device actuated by optical forces

Modeling the size dependent pull-in instability of beam-type NEMS using strain gradient theory

Determination of the etching mechanism in MgS and ZnMgSSe epitaxial lift‐off layers

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