We present electronic transport characteristics of ternary alloy Cd 1-x Zn x S nanowire networks in the dark and under white light illumination. Compared to the negligible dark current, we observed a photocurrent enhancement up to 4 orders of magnitude at intensity of 460 mW/cm 2 . The time constant of the dynamic photoresponse is ~5 sec. The current -voltage characteristics at different intensities show Ohmic behavior at low bias and space charge limited conduction (SCLC) at higher bias voltages. The SCLC behavior and slow time response indicate that the charge transport is dominated by tunneling at the percolating inter-nanowire junctions.(Some figures in this article are in color only in the electronic version)
Introduction:Chemically synthesized semiconductor nanocrystals have attracted tremendous interest because of the ability to tune their band gap through variation of their sizes and shapes. These nanocrystalline materials, specially that work in the visible range, have great potential for applications in optoelectronic devices such as solar cells, light emitting diodes, lasers, waveguides and photodetectors [1][2][3][4][5]. In addition, their ease of processibility from solution is of great advantage as they can cover large areas at low cost and are compatible with flexible substrates. Many studies have been done on semiconductor quantum dots [4][5][6][7][8] and quantum dot polymer composites [9][10][11]. However, it is believed that materials that are one dimensional (nanorods, nanowires) can provide added benefit as they make a percolating pathway for charge transport rather easily compared to zero dimensional quantum dots. There have been several reports on the optoelectronic studies of binary nanowires (NWs) [1][2][3][12][13][14][15]. For example, Huynh et al used CdSe nanorods for making organic-inorganic hybrid solar cells [2]. Kind et al used ZnO NWs for ultraviolet photodetectors and optical switches [3]. Nonetheless, tuning the bandgap by varying the diameter and aspect ratio of one-dimensional NWs is extremely challenging. An alternative route of tuning the bandgaps of NWs is to engineer the relative composition of the materials to fabricate ternary alloy NWs. Despite the obvious advantage of ternary nanowires over binary NWs, there are only a few reports on the growth and optical properties of several ternary NW systems [16][17][18][19], and no reports on the optoelectronic investigation of any ternary NWs. Study of charge transport and photoresponse properties of ternary NW network film is important in order to determine whether this material could be useful for optoelectronic applications.In this paper, we report on the first optoelectronic transport characteristics of ternary alloy Cd 1-x Zn x S NW network devices. The NW films were prepared by drop-casting the NWs from solution on inter-digitated gold source and drain electrodes fabricated on Si/SiO 2 substrate.