Disorder-induced linear magnetoresistance in 
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/
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>SrTi</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
 heterostructures

Gao, Kuang Hong; Lin, Tie; Ma, Xiao Rong; Li, Qiu Lin; Li, Zhi Qing

doi:10.1103/physrevb.109.045307

Phys. Rev. B

2024

DOI: 10.1103/physrevb.109.045307

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Disorder-induced linear magnetoresistance in Al2O3 / SrTiO3 heterostructures

Kuang Hong Gao,

Tie Lin,

Xiao Rong Ma

et al.

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Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

Christensen,

Steegemans,

D. Pomar

et al. 2024

Nat Commun

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Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal, and extraordinary magnetoresistance, each with distinct physical origins. In recent years, extreme magnetoresistance (XMR) has been observed in topological and non-topological materials displaying a non-saturating magnetoresistance reaching 103−108% in magnetic fields up to 60 T. XMR is often intimately linked to a gapless band structure with steep bands and charge compensation. Here, we show that a linear XMR of 80,000% at 15 T and 2 K emerges at the high-mobility interface between the large band-gap oxides γ-Al2O3 and SrTiO3. Despite the chemically and electronically very dissimilar environment, the temperature/field phase diagrams of γ-Al2O3/SrTiO3 bear a striking resemblance to XMR semimetals. By comparing magnetotransport, microscopic current imaging, and momentum-resolved band structures, we conclude that the XMR in γ-Al2O3/SrTiO3 is not strongly linked to the band structure, but arises from weak disorder enforcing a squeezed guiding center motion of electrons. We also present a dynamic XMR self-enhancement through an autonomous redistribution of quasi-mobile oxygen vacancies. Our findings shed new light on XMR and introduce tunability using dynamic defect engineering.

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Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

Christensen,

Steegemans,

D. Pomar

et al. 2024

Nat Commun

View full text Add to dashboard Cite

show abstract

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Disorder-induced linear magnetoresistance in Al2O3 / SrTiO3 heterostructures

Cited by 1 publication

References 44 publications

Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

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