2019
DOI: 10.1107/s1600576719008033
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Disorder in La1−x Ba1+x GaO4−x/2 ionic conductor: resolving the pair distribution function through insight from first-principles modeling

Abstract: Ionic conduction in dry LaBaGaO 4 occurs through the vacant oxygen sites formed by the substitution of Ba for La. The resulting La 1Àx Ba 1+x GaO 4Àx/2 solid solution shows significant disorder characteristics. The local structure of compositions x = 0, 0.20 and 0.30 was studied using the pair distribution function (PDF). Unfortunately, increasing peak overlap and the number of independent structural parameters make PDF modeling challenging when dealing with low-symmetry phases. To overcome this problem, densi… Show more

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Cited by 4 publications
(4 citation statements)
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References 38 publications
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“…However, unlike the scheelite structure, the O int defects cannot be produced successfully via La 3+ substitution on Ba 2+ sites. 66,185 Multiple complementary characterizations, including NPD, static lattice simulations based on interatomic potentials method, DFT simulations, and PDF analysis, 27,40,186 have been employed to elucidate that the oxygen vacancies in La 1−x Ba 1+x GaO 4−0.5x are accommodated through forming Ga 2 O 7 units (Figure 19b), maintaining the tetrahedral Ga geometry instead of producing the unstable 3-coordinated Ga. The lowest-energy positions of oxygen vacancies are located close to the Ba La ′ cation site, as indicated by DFT calculations in 2019 by Coduri et al 40 The PDF analysis revealed a significant structural disorder nature for Ga 2 O 7 dimers because of the larger distribution of interatomic distances upon Ba 2+ substitution for the smaller La 3+ .…”
Section: Labagao 4 -Type Oxide Ion Conductormentioning
confidence: 99%
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“…However, unlike the scheelite structure, the O int defects cannot be produced successfully via La 3+ substitution on Ba 2+ sites. 66,185 Multiple complementary characterizations, including NPD, static lattice simulations based on interatomic potentials method, DFT simulations, and PDF analysis, 27,40,186 have been employed to elucidate that the oxygen vacancies in La 1−x Ba 1+x GaO 4−0.5x are accommodated through forming Ga 2 O 7 units (Figure 19b), maintaining the tetrahedral Ga geometry instead of producing the unstable 3-coordinated Ga. The lowest-energy positions of oxygen vacancies are located close to the Ba La ′ cation site, as indicated by DFT calculations in 2019 by Coduri et al 40 The PDF analysis revealed a significant structural disorder nature for Ga 2 O 7 dimers because of the larger distribution of interatomic distances upon Ba 2+ substitution for the smaller La 3+ .…”
Section: Labagao 4 -Type Oxide Ion Conductormentioning
confidence: 99%
“…66,185 Multiple complementary characterizations, including NPD, static lattice simulations based on interatomic potentials method, DFT simulations, and PDF analysis, 27,40,186 have been employed to elucidate that the oxygen vacancies in La 1−x Ba 1+x GaO 4−0.5x are accommodated through forming Ga 2 O 7 units (Figure 19b), maintaining the tetrahedral Ga geometry instead of producing the unstable 3-coordinated Ga. The lowest-energy positions of oxygen vacancies are located close to the Ba La ′ cation site, as indicated by DFT calculations in 2019 by Coduri et al 40 The PDF analysis revealed a significant structural disorder nature for Ga 2 O 7 dimers because of the larger distribution of interatomic distances upon Ba 2+ substitution for the smaller La 3+ . The proton defects in La 1−x Ba 1+x GaO 4−0.5x were produced through incorporating water molecules into the oxygen vacancies, producing hydroxyl anions in the structure according to the equation H 185 The incorporation of water molecules further induces the breakup of the Ga 2 O 7 dimers into two isolated GaO 4 units, forming hydrogen bonding between them (Figure 19c).…”
Section: Labagao 4 -Type Oxide Ion Conductormentioning
confidence: 99%
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“…The oxygen vacancies in La0.8Ba1.2GaO3.9 are accommodated through the condensation of two adjacent GaO4 units to form a Ga2O7 group (in a way analogous to acceptor doped LaNbO4) 169 . On the local scale, the oxygen vacancies are pinned to the nearest-neighbour cation site by the Ba La ' defects and there is no ordering of the Ga2O7 units 170 . Water incorporation induces the break-up of the Ga2O7 units 169 , according to the reaction Ga2O7 + H2O → 2 GaO4H.…”
Section: Gallium-based Oxidesmentioning
confidence: 99%