Disorder and the Optical Absorption Edge of Hydrogenated Amorphous Silicon

Cody, George D.; Tiedje, T.; Abeles, B.; Moustakas, T. D.; Brooks, B.; Goldstein, Y.

doi:10.1051/jphyscol:1981463

Cited by 94 publications

(115 citation statements)

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“…We used the It is well-known that Urbach energy E U characterizes the disordering degree in the investigated system and is described by the equation [11] (…”

Section: Resultsmentioning

confidence: 99%

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Studenyak¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Cu 6 PS 5 I-based thin films were deposited using non-reactive radio-frequency magnetron sputtering. Structural studies of thin films were performed by scanning electron microscopy, their chemical composition were determined using energydispersive X-ray spectroscopy. As-deposited thin films were irradiated with wideband radiation of Cu-anode X-ray tube at different exposition times. Optical transmission spectra of X-ray irradiated Cu 5.56 P 1.66 S 4.93 I 0.85 thin films were measured depending on irradiation time. The Urbach absorption edge and dispersion of refractive index for X-ray irradiated Cu 5.56 P 1.66 S 4.93 I 0.85 thin films were studied. It has been revealed the nonlinear decrease of energy pseudogap and nonlinear increase of refractive index with increase of X-ray irradiation time.

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“…We used the It is well-known that Urbach energy E U characterizes the disordering degree in the investigated system and is described by the equation [11] (…”

Section: Resultsmentioning

confidence: 99%

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Studenyak¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Multiple methods exist for calculating the bandgap DOS as outlined by Kalb et al, 31 but the majority of those rely on extensive temperature-dependent charge transport measurements with the main assumption being that there is no temperature dependence in bandgap states. [57][58][59] In contrast, data analysis based on the Grünewald et al 30 model can be performed using a single transistor transfer characteristics at any temperature. In particular, the method relies on the analysis of the subthreshold slope from which the bandgap states can be calculated.…”

Section: Photodoping and Bandgap Statesmentioning

confidence: 99%

Quasi Two-Dimensional Dye-Sensitized In₂O₃ Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

Mottram

Lin

Pattanasattayavong

et al. 2016

ACS Appl. Mater. Interfaces

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We report the development of dye-sensitized thin-film phototransistors consisting of an ultra-thin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a selfassembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ~500 nm with a maximum photosensitivity of ~10 6 and a responsivity value of up to 2×10 3 A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92 % in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.

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“…In fact, the regular decrease of Urbach energy and free carriers lifetime (Figures 12 and 13) for In-doped layers, as recoded also by Cody et al [53] for incrementally aluminumdoped binary compounds, contrasts with the Yb-doped layers behavior. A phenomenon of saturation seems to occur for increasing doping amounts inside these latter layers ( Figure 11).…”

Section: Discussion and Analysismentioning

confidence: 79%

Quantum Effects of Indium/Ytterbium Doping on ZnO-Like Nano-Condensed Matter in terms of Urbach-Martienssen and Wemple-DiDomenico Single-Oscillator Models Parameters

Boukhachem

Ouni

Bouzidi

et al. 2012

ISRN Condensed Matter Physics

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Conducting and transparent optical ZnO thin films were deposited on glass substrates by a simple mini spray technique. Alternatively, some of the obtained films were doped with indium and ytterbium at the molar rates of: 1, 2, and 3% (In) and 100, 200, and 300 ppm (Yb). In addition to the classical structural investigations including XRD, microhardness vickers (Hv), and optothermal techniques, thorough optical measurements have been carried out for comparison purposes. The refractive indices and the extinction coefficients of the differently doped layers have been deduced from their transmission-reflection spectra over an extended wavelength range. Analysis of the refractive index data through Wemple-DiDomenico single oscillator model yielded quantum characteristics along with the values of long-wavelength dielectric constant, average oscillator wavelength, average oscillator strength, average oscillator energy and dispersion energy. Real and imaginary parts of dielectric constant have also been used to calculate free carrier plasma resonance frequency, optical relaxation time, and free carriers concentration-to-effective mass ratio. Finally, analysis of Urbach-Martienssen model parameters allowed proposing nanoscale explanations to the divergence about doping-related evolution of Urbach tails, this intriguing item having been intensively discussed in the literature in the last decades.

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Disorder and the Optical Absorption Edge of Hydrogenated Amorphous Silicon

Cited by 94 publications

References 0 publications

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Quasi Two-Dimensional Dye-Sensitized In₂O₃ Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

Quantum Effects of Indium/Ytterbium Doping on ZnO-Like Nano-Condensed Matter in terms of Urbach-Martienssen and Wemple-DiDomenico Single-Oscillator Models Parameters

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Disorder and the Optical Absorption Edge of Hydrogenated Amorphous Silicon

Cited by 94 publications

References 0 publications

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu6PS5I-based thin films deposited using magnetron sputtering

Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

Quantum Effects of Indium/Ytterbium Doping on ZnO-Like Nano-Condensed Matter in terms of Urbach-Martienssen and Wemple-DiDomenico Single-Oscillator Models Parameters

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Quasi Two-Dimensional Dye-Sensitized In₂O₃ Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications