Dislocations

Abstract

The sections in this article are Introduction Geometry Experimental Results on the Electronic Properties of Dislocations and Deformation‐Induced Point Defects Electron Paramagnetic Resonance ( EPR ) Spectroscopy of Plastically Deformed Silicon Information on Dislocations and Point Defects from Electrical Measurements Phenomena Indicating Shallow Dislocation‐Related States Photoluminescence ( PL ) Optical Absorption Microwave Conductivity ( MWC ) Electric Dipole Spin Resonance ( EDSR ) Electron Beam Induced Current ( EBIC ) Germanium Gallium Arsenide A II B VI Compounds Theoretical Investigations about Electronic Levels of Dislocations Core Structure Calculations Deep Electron Levels at Dislocations Core Bond Reconstruction and Reconstruction Defects Kinks, Reconstruction Defects, Vacancies, and Impurities in the Dislocation Cores Shallow Dislocation Levels Deep Dislocation Levels in Compounds Dislocation Motion General Measurements of the Velocity of Perfect Dislocations in Elemental Semiconductors Kink Formation and Kink Motion Experiments on the Mobility of Partial Dislocations Compounds Theory of Dislocation Motion Dislocation Motion in Undoped Material Dislocation Motion in Doped Semiconductors Dislocation Generation and Plastic Deformation Dislocation Nucleation Dislocation Multiplication (Plastic Deformation) Generation of Misfit Dislocations Gettering with the Help of Dislocations Acknowledgements

Electronic and Optical Properties of Dislocations in Silicon

“…First models of perfect dislocations assumed dangling bonds in their core [35]. Experimental data, however, obtained mainly by EPR spectroscopy refer to a low density of such dangling bonds [27]. Therefore, different models of the reconstruction of perfect and partial dislocations have been proposed by computer simulation [43].…”