Dislocations in 4
            <scp>H</scp>
            ‐
            <scp>SiC</scp>
            Substrates and Epilayers

Raghothamachar, Balaji; Dudley, Michael

doi:10.1002/9783527824724.ch7

Cited by 2 publications

(1 citation statement)

References 42 publications

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“…On the other hand, limited process control over the densities of various crystalline defects in SiC, including basal plane dislocations (BPDs) [2,3] and bar stacking faults (BSFs) [4], can significantly impact device yields. Synchrotron X-ray topography (XRT) has been applied for highly sensitive characterization of crystalline defects in PVT-grown SiC [5]. This technique has enabled the observation of basal plane slip bands (BPSBs), which are densely clustered arrays of parallel BPDs [6].…”

Section: Introductionmentioning

confidence: 99%

Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC

Chung¹,

Viveros²,

Lee³

et al. 2023

DDF

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Correlation of X-ray topography and production line defect inspection tools has demonstrated the capability of in-line tools to differentiate between geometrically comparable basal plane slip bands (BPSB) and bar stacking faults (BSF) on 4H SiC wafers. BPSBs were found to propagate through epitaxial growth at high rates and with similar photoluminescence signatures to post-epitaxy BSFs. Molten KOH etching post-epitaxy provided evidence of distinguishing features between BPSBs and BSFs, suggesting that the defects were indeed correctly identified by in-line defect inspection tools pre-epitaxy.

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Section: Introductionmentioning

confidence: 99%

Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC

Chung¹,

Viveros²,

Lee³

et al. 2023

DDF

Self Cite

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Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals

Hu,

Liu,

Chen

et al. 2024

DDF

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To better understand the effects of various growth parameters during the early-stages of PVT growth of 4H-SiC on resulting defect structures, multiple short duration growths have been carried out under varying conditions of seed quality, nucleation rate, thermal gradients, and N incorporation. Besides the replication of TSDs/TMDs and TEDs as well as the deflection of TSDs/TMDs into Frank dislocations, synchrotron monochromatic beam x-ray topography (SMBXT) studies also reveal the formation of stacking faults bounded by Frank dislocations. Using ray tracing simulations to characterize the Frank dislocations, three types of stacking faults are revealed: Type 1 stacking fault resulting from 2D nucleation of 6H polytype on terraces; Type 2 stacking fault resulting from macrostep overgrowth of the surface growth spiral steps of TSDs/TMDs which separate into c/2 or c/4 increments; Type 3 stacking fault resulting from vicinal step overgrowth of surface growth spiral steps of TSDs/TMDs which separate into c/4 and 3c/4 increments. Analysis of atomic resolution scanning transmission electron microscopy (STEM) images reveals the mechanism of the Type 3 fault.

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Dislocations in 4 H ‐ SiC Substrates and Epilayers

Cited by 2 publications

References 42 publications

Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC

Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC

Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals

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