2019
DOI: 10.1016/j.ceramint.2019.08.034
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Dislocations and particle size governed band gap and ferromagnetic ordering in Ni doped ZnO nanoparticles synthesized via co-precipitation

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Cited by 49 publications
(18 citation statements)
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“…As for the latter reason, it was shown in Ref. [35] that the effect of dislocations on the bandgap of ZnO is only minor, i.e. an increase in dislocations density form ∼ 2.4 × 10 15 to ∼ 5.3 × 10 15 1/m 2 causes a minor bandgap narrowing from 3.26 to 3.20 eV, one order of magnitude smaller than observed in the present work.…”
Section: Resultscontrasting
confidence: 46%
See 1 more Smart Citation
“…As for the latter reason, it was shown in Ref. [35] that the effect of dislocations on the bandgap of ZnO is only minor, i.e. an increase in dislocations density form ∼ 2.4 × 10 15 to ∼ 5.3 × 10 15 1/m 2 causes a minor bandgap narrowing from 3.26 to 3.20 eV, one order of magnitude smaller than observed in the present work.…”
Section: Resultscontrasting
confidence: 46%
“…Further possible reasons for the observed bandgap narrowing include: (i) Cu diffusion into ZnO during HPT processing and its chemical modification [34], and (ii) gradient of dislocations density across the ZnO particle and concomitant variation of the bandgap [35]. As for the former reason, our previous study reveals that no intermixing occurred between the cladding Cu disk and ZnO clusters [10].…”
Section: Resultsmentioning
confidence: 93%
“…To estimate the band gap of pure ZnO and ZnO/psyllium husk hybrid samples, Tauc’s plot is performed. The absorption coefficient α for direct band gap materials relates to optical band gap energy according to the expression [ 31 ].…”
Section: Methodsmentioning
confidence: 99%
“…[18] Alternatively, the combination of different semiconductors gives rise to p-n or p-p heterojunction. [19,20] A number of different metal oxides have so far been shown to form heterojunctions with NiO, such as zinc, tin, iron, and copper oxides. [21] The CuO-based heterojunctions are of great interest since copper oxide is a p-type semiconductor and offers a very narrow bandgap in the range of 1.2-1.5 eV along with conductivity around 10 À4 s cm À1 [22,23] These outstanding properties have drawn increasing attention for wide range of applications such as semiconductor, catalysis, and gas sensors.…”
Section: Introductionmentioning
confidence: 99%