Dislocation-related electron capture behaviour of traps in n-type GaN

Fang, Z-Q.; Look, David C.; Polenta, L.

doi:10.1088/0953-8984/14/48/351

Cited by 73 publications

(78 citation statements)

References 19 publications

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“…Actually, trap A 1 has been repeatedly observed in thin GaN layers grown by various techniques and is often associated with line defects, i.e., dislocations. [7][8][9][10] This trap was also reported in AlGaN/ GaN HEMTs by measuring drain leakage current at different temperatures 2 and current DLTS. 4 On the other hand, trap A 2 can be induced by electron irradiation, simultaneously with another well-known trap, E ͑0.16 eV͒.…”

supporting

confidence: 61%

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy

Fang

Look

Kim

et al. 2005

Applied Physics Letters

102

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AlGaN ∕ GaN ∕ SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10−12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

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supporting

confidence: 61%

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy

Fang

Look

Kim

et al. 2005

Applied Physics Letters

102

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“…Hence, the IC principle is insufficient for the full identification of the quantum boundaries already for bipartite settings (similar results have been obtained in multipartite settings [17,18]). We extend the nonlocality inequalities to include the effects of the randomness.…”

Section: Introductionsupporting

confidence: 55%

Cryptographic quantum bound on nonlocality

Ishizaka

2017

Phys. Rev. A

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Information causality states that the information obtainable by a receiver cannot be greater than the communication bits from a sender, even if they utilize no-signaling resources. This physical principle successfully explains some boundaries between quantum and postquantum nonlocal correlations, where the obtainable information reaches the maximum limit. We show that no-signaling resources of pure partially entangled states produce randomness (or noise) in the communication bits, and achievement of the maximum limit is impossible, i.e., the information causality principle is insufficient for the full identification of the quantum boundaries already for bipartite settings. The nonlocality inequalities such as so-called the Tsirelson inequality are extended to show how such randomness affects the strength of nonlocal correlations. As a result, a relation followed by most of quantum correlations in the simplest Bell scenario is revealed. The extended inequalities reflect the cryptographic principle such that a completely scrambled message cannot carry information.

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“…Sometimes a decrease of the DLTS signal with decreasing rate window is observed and this effect is usually attributed to a capture barrier, such as might be associated with threading dislocations. 19 Further DLTS investigations will be needed to understand the peculiar capture behavior of trap H5.…”

Section: Resultsmentioning

confidence: 99%

Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition

Fang

Claflin

Kerr

et al. 2007

Journal of Applied Physics

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Electron and hole traps in N-doped ZnO were investigated using a structure of n + -ZnO:Al/ i-ZnO/ ZnO:N grown on a p-Si substrate by metalorganic chemical vapor deposition ͑for growth of the ZnO:N layer͒ and sputtering deposition ͑for growth of the i-ZnO and n + -ZnO:Al layers͒. Current-voltage and capacitance-voltage characteristics measured at temperatures from 200 to 400 K show that the structure is an abrupt n + − p diode with very low leakage currents. By using deep level transient spectroscopy, two hole traps, H3 ͑0.35 eV͒ and H4 ͑0.48 eV͒, are found in the p-Si substrate, while one electron trap E3 ͑0.29 eV͒ and one hole trap H5 ͑0.9 eV͒ are observed in the thin ZnO:N layer. Similarities to traps reported in the literature are discussed.

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Dislocation-related electron capture behaviour of traps in n-type GaN

Cited by 73 publications

References 19 publications

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy

Cryptographic quantum bound on nonlocality

Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition

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