Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

Wong, Yuen Yee; Chang, Edward Yi; Wu, Yue; Hudait, Mantu K.; Yang, Tung Sheng; Chang, Jei Wen; Ku, Jui Tai; Chou, Wu Ching; Chen, Chiang Yao; Maa, Jer‐Shen; Lin, Yueh Chin

doi:10.1016/j.tsf.2011.03.054

Cited by 17 publications

(9 citation statements)

References 23 publications

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“…Higher N flux pushing the system to N rich condition is expected to result in rougher films. 16 To quantify the amount of strain present in the film, Raman spectroscopy was used. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, crystallographic orientation and surface polarity is seen to play an important role in deciding the performance of the photodetectors by modifying the metal-semiconductor contact. 13 In this work, we optimized good quality nonpolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-GaN grown on (1-102) r-plane sapphire substrate by changing the growth conditions. The photodetector is fabricated on the best grown film and its performance was compared with photodetector grown on conventional (0 0 0 2) c-plane axis.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced UV detection by non-polar epitaxial GaN films

et al. 2015

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Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphology and strain of a-GaN epilayers was compared and the best condition was obtained for the nitrogen flow of 1 sccm. Atomic force microscopy was used to analyze the surface morphology while the strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by reciprocal space mapping technique. UV photo response of a-GaN film was measured after fabricating a metal-semiconductor-metal structure over the film with gold metal. The external quantum efficiency of the photodetectors fabricated in the (0002) polar and (11-20) nonpolar growth directions were compared in terms of responsivity and nonpolar GaN showed the best sensitivity at the cost of comparatively slow response time.

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“…Higher N flux pushing the system to N rich condition is expected to result in rougher films. 16 To quantify the amount of strain present in the film, Raman spectroscopy was used. Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhanced UV detection by non-polar epitaxial GaN films

et al. 2015

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“…В формировании высококачественных слоев InGaN с высоким содержанием In может помочь метод модулирования потоков металлов (MME -metal modulated epitaxy) с периодическим ростом в металлобогащенных условиях, и последующей выдержкой поверхности роста под потоком азота для связывания накопившегося металла. Этот метод продемонстрировал свою эффективность для повышения кристаллического качества бинарных соединений A III N [18][19][20]. В работе [21] подобным образом были получены слои InGaN с долей индия 22% < [In] < 72% хорошего структурного качества: с шириной пика рентгеновского отражения (0002) < 416 угл.…”

Section: Introductionunclassified

Особенности структурных и оптических свойств InGaN-слоев, полученных методом МПЭ ПА с импульсной подачей потоков металлов

Andreev¹,

Lobanov²,

Krasilnikova³

et al. 2021

Физика И Техника Полупроводников

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This paper presents the results of studying the properties of InGaN layers with a high InN content (80-90%) obtained by molecular beam epitaxy with plasma activation of nitrogen on sapphire substrates with AlN / GaN buffer layers. The InGaN layers were formed using the metal modulated epitaxy (MME) method, as well as in nitrogen and metal rich conditions. It was found that the use of the MME method leads to a decrease in the density of threading dislocations in the InGaN layers. Nevertheless, despite the higher dislocation density, the smallest threshold of stimulated emission of ~ 20 kW / cm2 at 77 K was obtained for the In0.8Ga0.2N layer grown under nitrogen rich conditions, which is associated with the lowest background electron concentration in this sample (1.6•1019 cm-3).

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“…Furthermore, the dislocations are more mobile at the higher growth temperatures applied in other epitaxy techniques. Therefore, even the lowest reported dislocation densities in GaN layers grown by MBE on sapphire of 10 8 cm −2 [18] are much higher than those produced by other techniques. State of the art MBE structures are thus commonly grown on commercial templates.…”

Section: Advantages and Challenges Of Iii-n Growth By Mbementioning

confidence: 82%

“…The high lattice mismatch between GaN and sapphire results in a high density of dislocations. Their amount could be reduced over the last years down to 10 8 cm −2 for GaN grown directly on sapphire by MBE [18]. The treatment of Al 2 O 3 with activated nitrogen at low temperatures produces a thin AlN layer [37].…”

Section: Substratesmentioning

confidence: 99%

Towards high electron mobility in Gan(0001) based InGaN and AlGaN heterostructures

Broxtermann¹

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Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

Cited by 17 publications

References 23 publications

Enhanced UV detection by non-polar epitaxial GaN films

Enhanced UV detection by non-polar epitaxial GaN films

Особенности структурных и оптических свойств InGaN-слоев, полученных методом МПЭ ПА с импульсной подачей потоков металлов

Towards high electron mobility in Gan(0001) based InGaN and AlGaN heterostructures

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