Dislocation nucleation from surface step in silicon: The glide set versus the shuffle set

Godet, Julien; Hirel, Pierre; Brochard, Sandrine; Pizzagalli, Laurent

doi:10.1002/pssa.200881460

Cited by 18 publications

(15 citation statements)

References 38 publications

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“…For example, recent molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures revealed a transition in the onset of silicon plasticity [26,27]: at high temperature and low stress, partial dislocation loops are nucleated in the glide set planes, but at low temperature and very high stress, perfect dislocation loops are formed in the shuffle set. This observation suggested that plasticity in silicon nanostructures could be controlled by dislocation nucleation.…”

Section: Discussionmentioning

confidence: 99%

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Kedjar¹,

Thilly²,

Demenet³

et al. 2010

Acta Materialia

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Indium antimonide (InSb) has been plastically deformed over a wide temperature range, from 400 down to À176°C (see the companion paper: Kedjar B, Thilly L, Demenet JL, Rabier J. Acta Mater 2009) and transmission electron microscopy was used to characterize the deformation microstructures. In the ductile regime, i.e. T > T tr1 % 150°C, the crystal deforms via the nucleation and motion of perfect dislocations belonging to the glide set. In the brittle domain, i.e. for T < T tr1 % 150°C, two regimes are observed: for T tr2 % 20°C < T < T tr1 % 150°C, the crystal deformation takes place via the nucleation and glide of dissociated perfect dislocations or only leading partials, while for T < T tr2 % 20°C, the crystal deformation proceeds via the nucleation and motion of perfect dislocations belonging to the shuffle set. In view of these observations, the brittle-to-ductile transition (at T tr1 ) is confirmed to correspond to a change in the dislocation nature in the glide set, from partial-mediated plasticity at low temperature to perfect-mediated plasticity at high temperature. Another transition is observed at T tr2 and corresponds to the glide-to-shuffle transition which is observed experimentally for the first time in a III-V compound semiconductor.

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Section: Discussionmentioning

confidence: 99%

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Kedjar¹,

Thilly²,

Demenet³

et al. 2010

Acta Materialia

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“…This size effect cannot be explained by the initial defects density like in metals (), because Si nanoobjects can be grown without residual defects. In these conditions, crack formation should take origin at the surface as it has been shown for dislocations ().…”

Section: Introductionmentioning

confidence: 79%

“…a) and can act as stress concentrators for the dislocation nucleation. In particular on the (100) surface the dimers formation can be viewed as surface steps that are well known to favor dislocation nucleation . The formation of a surface defect appears then as the main parameter governing dislocation nucleation.…”

Section: Discussionmentioning

confidence: 99%

Surface effects on the mechanical behavior of silicon nanowires: Consequence on the brittle to ductile transition at low scale and low temperature

Godet

Nabi

Brochard

et al. 2015

Phys. Status Solidi A

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Understanding the origin of the brittle to ductile transition at low scale in Si requires the characterization of the elementary mechanisms governing crack formation or dislocation nucleation. By molecular dynamics simulations, we have investigated the role of three surface states of silicon nanowires (NWs), fresh cut, reconstructed by annealing at 300 K and amorphized, for the activation of plastic mechanisms under tensile and compressive strains. We show that the onset of crack formation identified as wedge-shaped defect on the surface was only observed in freshcut NWs in tension. These NWs present high yield strain due to the high symmetry of the surface and the absence of surface defects favoring dislocation nucleation as for the other surface states. This result seems to confirm that the crack formation in nanostructures could be linked to dislocations interactions on intersecting glide planes as experimentally observed rather than direct crack opening.

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“…Increasing the temperature does not allow the glide set planes to be involved (unlike in experiments), this was supposed to be due to the limited number of atoms in the simulation box which prevents the formation of kink pairs. In recent simulations the number of atoms was increased up to 1.5×10 4 especially along the step providing remarkable results [16] which can be summarized as follows:…”

Section: Generation At the Interface Or Within The Filmmentioning

confidence: 95%

“…3.1 Simulation of dislocation nucleation from surface step This approach was mainly developed by the group of the University of Poitiers (France) [14][15][16]. It consists in studying by atomic simulation the extended defects which can be emitted by a surface step on the (100) surface of Si and parallel to <011> under uniaxial stress (tension or compression).…”

Section: Generation At the Interface Or Within The Filmmentioning

confidence: 99%

Dislocation nucleation in heteroepitaxial semiconducting films

Pichaud

Burle

Texier

et al. 2009

Phys. Status Solidi (c)

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The nucleation of dislocation in semiconductors is still a matter of debate and especially in heteroepitaxial films. To understand this nucleation process the classical models of dislocation nucleation are presented and criticized. Two main points are then developed: emission of dislocations from surface steps and the role of point defects agglomeration on dislocation nucleation. Recent atomic simulation of half loops emission from surface steps and experimental evidences of anisotropic relaxation of GaInAs films deposited on vicinal (111) GaAs substrates strongly support surface steps as preferential sites for nucleation. In low temperature buffer layer structures (SiGe/Si) an original dislocation structure is observed which corresponds to the dislocation emission in different glide systems by a unique nucleation centre. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Dislocation nucleation from surface step in silicon: The glide set versus the shuffle set

Cited by 18 publications

References 38 publications

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Surface effects on the mechanical behavior of silicon nanowires: Consequence on the brittle to ductile transition at low scale and low temperature

Dislocation nucleation in heteroepitaxial semiconducting films

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