Dislocation motion in silicon: the shuffle-glide controversy revisited

Pizzagalli, Laurent; Beauchamp, P.

doi:10.1080/09500830802136222

Cited by 42 publications

(25 citation statements)

References 33 publications

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“…As seen in Table III, activation energies F k and W m for glide-set dislocations or partial dislocations are sufficiently fitted to those derived theoretically [54,55]. The partial dislocations move in correlation with each other and with the connecting stacking fault.…”

Section: Hirth-lothe Diffusion Double Kink Modelmentioning

confidence: 64%

An overview of plasticity of Si crystals governed by dislocation motion

Yonenaga

2015

Engineering Fracture Mechanics

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Section: Hirth-lothe Diffusion Double Kink Modelmentioning

confidence: 64%

An overview of plasticity of Si crystals governed by dislocation motion

Yonenaga

2015

Engineering Fracture Mechanics

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“…This observation suggested that plasticity in silicon nanostructures could be controlled by dislocation nucleation. Other atomistic calculations suggest, among several hypotheses, that the transition between shuffle and glide modes in silicon could be explained by the dissociation of the perfect shuffle dislocations into partial glide dislocations, a shuffle-glide transformation that is energetically favored [28]. In this context, given an initial distribution of perfect shuffle dislocations, one may expect to observe a thermally activated dissociation above a threshold temperature, which may depend on the applied stress.…”

Section: Discussionmentioning

confidence: 97%

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Kedjar¹,

Thilly²,

Demenet³

et al. 2010

Acta Materialia

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Indium antimonide (InSb) has been plastically deformed over a wide temperature range, from 400 down to À176°C (see the companion paper: Kedjar B, Thilly L, Demenet JL, Rabier J. Acta Mater 2009) and transmission electron microscopy was used to characterize the deformation microstructures. In the ductile regime, i.e. T > T tr1 % 150°C, the crystal deforms via the nucleation and motion of perfect dislocations belonging to the glide set. In the brittle domain, i.e. for T < T tr1 % 150°C, two regimes are observed: for T tr2 % 20°C < T < T tr1 % 150°C, the crystal deformation takes place via the nucleation and glide of dissociated perfect dislocations or only leading partials, while for T < T tr2 % 20°C, the crystal deformation proceeds via the nucleation and motion of perfect dislocations belonging to the shuffle set. In view of these observations, the brittle-to-ductile transition (at T tr1 ) is confirmed to correspond to a change in the dislocation nature in the glide set, from partial-mediated plasticity at low temperature to perfect-mediated plasticity at high temperature. Another transition is observed at T tr2 and corresponds to the glide-to-shuffle transition which is observed experimentally for the first time in a III-V compound semiconductor.

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“…Recently, Pizzagalli et al 17 claimed that Duesbery's curve was incorrect and that the activation energy of SD is always lower than that of GD. However, our results focus on the dislocation nucleation process.…”

Section: Stress-dependent Activation Energy: Shuffle-set Versus mentioning

confidence: 99%

“…However, a series of recent experimental results [13][14][15][16] has suggested that a SD nucleates and moves at and below room temperature under hydrostatic pressure ͑5-15 GPa͒ and high shear stress ͑ϳ1 GPa͒. 17 There are three theoretical points of view from which to examine the shuffle-glide controversy. Thus, the so-called shuffle-glide controversy was revisited.…”

Section: Introductionmentioning

confidence: 99%

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Reaction pathway analysis for dislocation nucleation from a sharp corner in silicon: Glide set versus shuffle set

Shima

Izumi

Sakai

2010

Journal of Applied Physics

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Using reaction pathway sampling, we have investigated the shear stress dependences of the activation energies of shuffle-set and glide-set dislocation nucleation from a sharp corner in silicon. The gradient of the glide-set dislocation curve is lower than that of the shuffle-set dislocation, and the athermal stress of glide-set dislocation is largely higher than that of shuffle-set dislocation. As a result, the two curves have a cross point, which means that shuffle-set dislocation is likely nucleated at high stress and low temperature and glide-set dislocation is likely nucleated at low stress and high temperature. Our result clearly explains the mechanism of recent molecular dynamics on these two types of dislocation nucleation at different temperatures and stress regimes. With increased compressive stress on the slip plane, the activation energy of the shuffle-set dislocation nucleation is greatly decreased, while that of glide-set dislocation nucleation is slightly increased. That would explain why shuffle-set dislocations were found under compressive stress fields.

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Dislocation motion in silicon: the shuffle-glide controversy revisited

Cited by 42 publications

References 33 publications

An overview of plasticity of Si crystals governed by dislocation motion

An overview of plasticity of Si crystals governed by dislocation motion

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Reaction pathway analysis for dislocation nucleation from a sharp corner in silicon: Glide set versus shuffle set

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