Dislocation-free InSb grown on GaAs compliant universal substrates

Ejeckam, F.; Seaford, M. L.; Lo, Yu‐Hwa; Hou, H.Q.; Hammons, B. E.

doi:10.1063/1.119642

Cited by 93 publications

(44 citation statements)

References 8 publications

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“…The system displays two interfaces along the [001] axis: i) a heterointerface between the lattice-mismatched layer and the twist-bonded layer and ii) a twist-bonded interface between this twist-bonded layer and the host substrate below. The position of rows of atoms above (below) the twist-bonded interface is denoted by integer numbers nI and n 2 (n 3 and n 4 ) in surface lattice units along the [110] and [1][2][3][4][5][6][7][8][9][10] directions. The twist-bonded layer and the host substrate are rotated one with respect to the other around the [001] axis by 16.26' that corresponds to the grain boundary 12s.…”

Section: Methodsmentioning

confidence: 99%

“…The way this sticking is done reveals the way the relaxation is presumed to act. If an intermediate viscous layer is used to stick the compliant layer to its host substrate, an elastic relaxation is guessed acting [6,7] whereas any attempt to weaken the interface by for example twisting and/or tilting the compliant axes relative to the host substrate ones means that some kind of plastic relaxation is expected [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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Plastic Relaxation Mechanics in Systems with a Twist-Bonded Layer

Priester

Grenet²

2002

MRS Proc.

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With a view to investigating how a thin film twist-bonded to a host substrate can have compliant behavior from a plasticity point of view, the onset and spread of edge dislocations throughout a mesa are studied. The discussion focuses on the energy relaxed by such dislocations in a mesa made from two coherently bonded lattice-mismatched layers twist-bonded onto a host substrate and patterned down to the film/host substrate interface. Our theoretical results show that the confinement of threading dislocations into a thin twist-bonded film is energetically favorable allowing the overgrowth of a mismatched layer exempt of any threading dislocation at least as far as mesas are concerned.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Plastic Relaxation Mechanics in Systems with a Twist-Bonded Layer

Priester

Grenet²

2002

MRS Proc.

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“…CnG (Y. H. Lo) pioneered the original concept of the practical compliant substrate [1] and produced the f~st twist-bonded "compliant universal substrates" of GaAs/GaAs and Si/Si [5][6][7]. Initial results suggested major reductions in threading defect densities for strained layer growth on twist-bonded substrates vs. bulk substrates.…”

Section: The Cornell Group (Cng)mentioning

confidence: 99%

“…Again, this seems rather unlikely, but cannot yet be discounted. THE CORNELL APPROACH: A second experiment using a different type of substrate raised the excitement levels to even greater heights [5][6][7]. The compliant substrate in this case was essentially just two GaAs wafers bonded together with an in-plane twist misorientation, and then thinned from one side to create a thin single crystal layer joined to a handle wafer by a twist grain boundary (see Figure 2b).…”

Section: Ifilmmentioning

confidence: 99%

Compliant substrate technology for dissimilar epitaxy

Floro¹,

Lee²,

Follstaedt³

et al. 2000

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“…The first utilized a metal 7 or glass [8][9][10][11] media to join the template and handle. The second approach employed twist-bonded ͑TB͒ substrates, 12,13 in which the template was directly bonded to the handle with an intentional azimuthal angular misorientation . The exact influence of the critical template/handle interface on film relaxation is uncertain at present.…”

mentioning

confidence: 99%

InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

Moran

Hansen

Matyi

et al. 1999

Applied Physics Letters

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In 0.44 Ga 0.56 As ͑3% mismatch͒ films 3 m thick were grown simultaneously on a conventional GaAs substrate, glass-bonded GaAs compliant substrates employing glasses of different viscosity, and a twist-bonded GaAs compliant substrate. High-resolution triple-crystal x-ray diffraction measurements of the breadth of the strain distribution in the films and atomic force microscopy measurements of the film's surface morphology were performed. The films grown on the glass-bonded compliant substrates exhibited a strain distribution whose breadth was narrowed by almost a factor of 2 and a surface roughness that decreased by a factor of 4 compared to the film simultaneously grown on the conventional substrate. These improvements in the film's structural quality were observed to be independent of the viscosity of the glass-bonding media over the range of viscosity investigated and were not observed to occur for the film grown on the twist-bonded substrate. © 1999 American Institute of Physics. ͓S0003-6951͑99͒01637-X͔ Limits on the structural quality of an epitaxial film which is lattice mismatched to the substrate precludes many potential device applications of heteroepitaxial semiconductor structures. Thin mismatched films retain a pseudomorphic strain so as to match the lattice constant of the much thicker substrate in the plane of the interface. Relaxation of a mismatched film grown beyond some critical thickness, 1 h c , which decreases with increasing mismatch, occurs at the expense of the film's structural quality. The film is eventually fully relaxed to its bulk lattice constant as it is grown beyond h c through the generation of an increasing number of misfit dislocations at the film/substrate interface and the subsequent propagation of threading dislocations into the film. 2 The concept of a compliant substrate has been proposed as a method for modifying the relaxation behavior of the heterostructure. 3 An ideal compliant substrate consists of a thin ''template'' layer mechanically decoupled from a thicker ''handle'' wafer. Calculations 3-6 of the strain partitioning in such a system predict enhanced relaxation without structural degradation of a mismatched film grown to a thickness well beyond the conventional h c on a template whose thickness is less than or approximately equal to h c .Experimentally realized compliant substrates have not had template layers that are completely decoupled from the handle wafer. Two approaches to fabricating macroscopic compliant substrates have predominated. The first utilized a metal 7 or glass 8-11 media to join the template and handle. The second approach employed twist-bonded ͑TB͒ substrates, 12,13 in which the template was directly bonded to the handle with an intentional azimuthal angular misorientation . The exact influence of the critical template/handle interface on film relaxation is uncertain at present. In glassbonded substrates, the ability of the glass to flow under a shear strain has been proposed as a means to allow strain relaxation. 9,14 This mechanism depends ...

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Dislocation-free InSb grown on GaAs compliant universal substrates

Cited by 93 publications

References 8 publications

Plastic Relaxation Mechanics in Systems with a Twist-Bonded Layer

Plastic Relaxation Mechanics in Systems with a Twist-Bonded Layer

Compliant substrate technology for dissimilar epitaxy

InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

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