Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

Momose, Kenji; Yonezu, Hiroo; Fujimoto, Yasuhiro; Furukawa, Yukio; Motomura, Yoshifumi; Aiki, K.

doi:10.1063/1.1425451

Cited by 73 publications

(51 citation statements)

References 12 publications

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“…Moreover, relatively strong photoluminescence (PL) and electroluminescence have been observed [2,3]. We have realized a dislocation-free GaPN layer, which was lattice-matched to Si, grown on Si substrates with a thin GaP buffer layer [4,5]. Additionally, the PL was observed at room temperature (RT).…”

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confidence: 93%

Increase in luminescence efficiency of GaPN layers by thermal annealing

Utsumi

Yonezu

Furukawa

et al. 2003

phys. stat. sol. (c)

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The effect of rapid thermal annealing (RTA) on the luminescence properties of GaPN layers was investigated. GaPN layers were grown on GaP and Si substrates. The luminescence properties were evaluated by cathodeluminescence and low-temperature photoluminescence. It was found that the luminescence intensity was increased and the peak photon energy was shifted to the high-energy side in all samples after RTA. The luminescence intensity of the GaPN layers was increased with increasing the annealing temperature. It was also found that high-temperature RTA can be applied to the GaPN layer grown on the Si substrate with a thin Si cap layer rather than the GaPN layer on the GaP substrate. It was estimated that high-temperature RTA reduces the spatial fluctuation of nitrogen compositions and the density of defects attributed to nitrogen atoms. . Thus, GaPN has attracted much attention as a novel material, because GaPN with the nitrogen composition of about 2% is latticematched to Si. Moreover, relatively strong photoluminescence (PL) and electroluminescence have been observed [2,3]. We have realized a dislocation-free GaPN layer, which was lattice-matched to Si, grown on Si substrates with a thin GaP buffer layer [4,5]. Additionally, the PL was observed at room temperature (RT). However, the PL intensity was decreased with increasing the nitrogen composition as reported in previous papers [2,6]. The decrease in the PL intensity implies that the GaPN layer contains a large number of nonradiative recombination centers and/or deep-levels. These defects could be generated due to a large miscibility gap and fluctuations of nitrogen compositions in the GaPN layer. It is needed to improve the crystalline quality of GaPN layer.Thus, we have investigated the effect of rapid thermal annealing (RTA) on the luminescence properties of the GaPN layer grown on a GaP substrate (GaPN/GaP) and a Si substrate (GaPN/Si), respectively.

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confidence: 93%

Increase in luminescence efficiency of GaPN layers by thermal annealing

Utsumi

Yonezu

Furukawa

et al. 2003

phys. stat. sol. (c)

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“…Lattice-matched layers and slightly tilted substrates are used to overcome two of the main difficulties faced by the growth of III-V materials on silicon substrates: misfit dislocations and anti-phase lattice defects, in order to obtain defect-free III-V materials and to get large minority carrier diffusion lengths for the PV applications (Furukawa et al 2002;Momose et al 2001;Volz et al 2011;Létoublon et al 2011;Grassman et al 2009). The tandem GaAsPN/Si double-junction solar cell will be electrically connected with a tunnel junction (TJ), either Sibased or III-V based or hybrid (III-V/Si), depending on both the modeling results and the structural properties of the III-V compound.…”

Section: Monolithic Growth Of Diluted-nitride Iii-v-n Compounds On Simentioning

confidence: 99%

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Durand

Almosni

Wang

et al. 2014

Energy Harvesting and Systems

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GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-nitride alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This alloy displays efficient photoluminescence at room temperature and good light absorption. An earlystage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the I-V curve show that carriers have been extracted from the GaAsPN alloy absorber, with an open-circuit voltage above 1 eV, however a low short-circuit current density obtained suggests that GaAsPN structural properties need further optimization. Considering all the pathways for improvement, the 2.25% efficiency and IQE around 35% obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual-junction solar cell on silicon substrate.

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“…For example, GaNP can be grown lattice matched to Si, opening new possibilities to combine high optical efficiency of the III-V compound semiconductors with the mainstream microelectronics based on silicon, yielding, e.g., novel optoelectronic integrated circuits based on GaNP/Si. 8,9 GaInNP alloys lattice matched to GaAs are expected to greatly improve the performance of GaInNP/GaAs HBTs. 10 For full exploration of the dilute nitrides in device applications, a better understanding and control of defects located at interfaces involving Ga͑In͒NP are required.…”

Section: Introductionmentioning

confidence: 99%

Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction

et al. 2010

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Optically detected magnetic resonance ͑ODMR͒ studies of molecular beam epitaxial GaNP/GaP structures reveal presence of a P-related complex defect, evident from its resolved hyperfine interaction between an unpaired electronic spin ͑S =1/ 2͒ and a nuclear spin ͑I = 1 2 ͒ of a 31 P atom. The principal axis of the defect is concluded to be along a ͗111͘ crystallographic direction from angular dependence of the ODMR spectrum, restricting the P atom ͑either a P Ga antisite or a P i interstitial͒ and its partner in the complex defect to be oriented along this direction. The principal values of the electronic g tensor and hyperfine interaction tensor are determined as: g Ќ = 2.013, g ʈ = 2.002, and A Ќ = 130ϫ 10 −4 cm −1 , A ʈ = 330ϫ 10 −4 cm −1 , respectively. The interface nature of the defect is clearly manifested by the absence of the ODMR lines originating from two out of four equivalent ͗111͘ orientations. Defect formation is shown to be facilitated by nitrogen ion bombardment under nonequilibrium growth conditions and the defect is thermally stable upon post-growth thermal annealing.

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Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

Cited by 73 publications

References 12 publications

Increase in luminescence efficiency of GaPN layers by thermal annealing

Increase in luminescence efficiency of GaPN layers by thermal annealing

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction

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