Dislocation contrast in large angle convergent-beam electron diffraction patterns

Chou, Chia-Fu; Preston, A. R.; Steeds, John W

doi:10.1080/01418619208205595

Cited by 34 publications

(19 citation statements)

References 15 publications

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“…Comparing Fig. 5(a) and (b), it can be observed that the TDs were out of contrast in the g ¼ 0002 image, which indicated that these dislocations were all pure edge-type TDs with a Burgers vectors b ¼ 1 3 h2 1 1 0i, according to the gb ¼ n criterion [8]. It was also observed that some of the TDs changed their direction and some of them formed dislocation loops.…”

Section: Resultsmentioning

confidence: 90%

Growth of crack-free AlGaN on selective-area-growth GaN

Miyake

Masuda

Ogawahara

et al. 2008

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 90%

Growth of crack-free AlGaN on selective-area-growth GaN

Miyake

Masuda

Ogawahara

et al. 2008

Journal of Crystal Growth

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“…For this purpose, we used the LACBED technique. [15][16][17] According to Chou et al, 18 when a dislocation line intersects the rocking curve contour ͑Bragg line͒ of a reflection g in a LACBED pattern, the contour splits into n fringes given by the value of g.bϭn and twists to one side or the other depending on the sign of g.b. Specifically, if u is taken as a unit vector along the positive direction of the dislocation line ͑using FS/RH convention͒, and v as a unit vector perpendicular to u in the plane of micrograph so that v.u points out of the paper ͑micrograph screen͒, then, if the diffraction contour is displaced toward sϽ0 at the vϾ0 side of the micrograph, n is positive, otherwise n is negative ͑here ͉n͉ϭ2).…”

Section: Transmission Electron Microscopy Investigation Of Dislocatiomentioning

confidence: 99%

Transmission electron microscopy investigation of dislocations in forward-biased 4H-SiC p–i–n diodes

Zhang

Pirouz

Lendenmann

2003

Applied Physics Letters

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When a 4H-SiC p–i–n diode is operated under forward biasing, it rapidly degrades, and the degradation is accompanied by the generation of a high density of stacking faults in the active region of the device. In this letter, the partial dislocations bounding the stacking faults have been investigated by transmission electron microscopy. They are found to be in the form of single leading partial half-loops with a 13〈101̄0〉 Burgers vector that bound triangular-shaped stacking faults. Two sides of each faulted loop are bound by two partial dislocation segments lying along different 〈12̄10〉 directions, while the other edge of the triangular stacking fault is a surface (or interfacial) step. The core nature of the two segments has been determined by the technique of large-angle, convergent-beam electron diffraction, and found to be different: one has a silicon core, while the other has a carbon core.

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“…Carpenter & Spence (1982) calculated splitting of higher-order Lauezone lines caused by the presence of dislocation. Bird & Preston (1988), Lu et al (1990), Wang et al (1992) and Chou et al (1992) simulated the LACBED patterns for a crystal with a dislocation, while Wang et al (1992) and Wei et al (1996) simulated the LACBED patterns for a crystal with a stacking fault.…”

Section: Introductionmentioning

confidence: 99%

“…Formula (53) was used by Bird & Preston (1988), Lu et al (1990), Wang et al (1992) and Chou et al (1992) for simulating LACBED patterns of a crystal with a dislocation. Errors arising in this case will be discussed in x4.3.…”

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confidence: 99%

Elastic scattering of partially coherent beams of fast electrons by a crystal with a defect

Боргардт¹

1999

Acta Cryst Sect A

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Scattering of a quasi-monochromatic electron beam by a crystal with a defect is described with the use of the mutual coherency function and the formalism of quasiBloch waves. An expression correlating the mutual intensity on the exit and entrance surfaces of the crystal in terms of the scattering matrix has been found. The matrix elements are determined by a system of integrodifferential equations, which have been obtained without using the column approximation. It has been shown that calculations of the matrix elements can be signi®cantly simpli®ed when the approximation of the small-angle scattering of quasi-Bloch waves by the defect displacement ®eld is satis®ed. Such an approximation can be applied in many cases, e.g. to a crystal with a dislocation. The mutual intensity on the crystal entrance surface has been found for the general case of defocused illumination. As an example of applying the new approach, expressions for the intensity in convergent-beam electron diffraction (CBED) and large-angle CBED (LACBED) patterns have been obtained. The LACBED patterns of a crystal with a dislocation have been simulated. It has been shown that the developed approach allows a more exact simulation of the LACBED than do the conventional approaches using the column approximation and the approximation of independent plane waves ®lling the illumination cone.

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Dislocation contrast in large angle convergent-beam electron diffraction patterns

Cited by 34 publications

References 15 publications

Growth of crack-free AlGaN on selective-area-growth GaN

Growth of crack-free AlGaN on selective-area-growth GaN

Transmission electron microscopy investigation of dislocations in forward-biased 4H-SiC p–i–n diodes

Elastic scattering of partially coherent beams of fast electrons by a crystal with a defect

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