Driven
by the exceptional success of 2,2′-bithiophene-3,3′-dicarboximide
imide (BTI) for enabling high-performance polymer semiconductors,
herein two BTI analogues 2,2′-bifuran-3,3′-dicarboximide
(BFI) and 2,2′-biselenophene-3,3′-dicarboximide
(BSeI) are designed and synthesized. The strong electron-withdrawing
imide group enables BFI and BSeI with high
electron deficiency, differing from typical furan- and selenophene-based
building blocks, which are electron-rich. Hence, n-type polymers can
be derived based on these two new imides. To investigate the effects
of chalcogen-atom substitution on the physicochemical properties and
device performance of these imide-bridged materials, two homopolymers PBFI and PBSeI are synthesized together with
the previously reported PBTI as control. Structures,
optoelectronic properties, and charge transport characteristics of PBFI and PBSeI are studied and compared to those
of the thiophene-based analogue PBTI in depth. The optical
band gap (E
g
opt) of the dibrominated
bichalcogenophene imide and corresponding homopolymer becomes narrowed
gradually as the chalcogen-atom size increases. Among all polymers, PBSeI shows the smallest E
g
opt of 1.78 eV. In addition, the lowest unoccupied molecular
orbital (LUMO) energy level (E
LUMO) of
the monomer and its homopolymer is also lowered. Such lowering of E
g
opts and E
LUMOs by simple chalcogen substitution should have profound
implications for device applications. The organic thin-film transistors
based on PBFI, PBTI, and PBSeI show n-type performance with the highest electron mobility of 0.085,
1.53, and 0.82 cm2 V–1 s–1, respectively, indicating that increasing chalcogen-atom size doesn’t
necessarily improve electron transport. It was found that chalcogen
atoms largely affect the packing of polymer chains, which leads to PBTI and PBSeI with a higher crystallinity compared
with PBFI. The results demonstrate that in addition to
the well-known BTI, BSeI should also be
a highly promising unit for constructing n-type polymers, and this
study provides an important foundation for further development of
high-performance organic semiconductors considering the significance
of imide-functionalized building blocks in the field of organic electronics.