Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude

Sonoda, Keiichiro; Ishikawa, Kiyoshi; Eimori, T.; Tsuchiya, O.

doi:10.1109/ted.2007.900684

Cited by 100 publications

(56 citation statements)

References 25 publications

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“…Nevertheless, a detailed analysis of RTN scaling is still lacking, as so far the RTN distribution has been described empirically [5] or with simple electrostatics approaches [6], thus with weak link to the technological parameters that are scaled.…”

Section: Introductionmentioning

confidence: 99%

Scaling trends for random telegraph noise in deca-nanometer Flash memories

Ghetti¹,

Compagnoni

Biancardi

et al. 2008

2008 IEEE International Electron Devices Meeting

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We present a thorough investigation of the random telegraph noise scaling trend for both NAND and NOR floating-gate Flash memories, including experimental and physics-based modeling results. The statistical distribution of the random telegraph noise amplitude is computed using conventional 3D TCAD simulations, establishing a direct connection with cell parameters. The analysis results in a simple formula for the random telegraph noise amplitude standard deviation as a function of cell width, length, substrate doping, tunnel oxide thickness and drain bias. All the simulation results are in good agreement with experimental data and are of utmost importance to understand the random telegraph noise instability and to control it in the development of next generation Flash technologies.

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Section: Introductionmentioning

confidence: 99%

Scaling trends for random telegraph noise in deca-nanometer Flash memories

Ghetti¹,

Compagnoni

Biancardi

et al. 2008

2008 IEEE International Electron Devices Meeting

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“…The obtained value supposing standard 180 nm technology with a transistor gate of 1 lm 2 is in the order of 0.04-0.08 mV. The log-normal distribution of the RTS amplitudes explains the high DV RTS found in some transistors [2], with values many times larger than the median.…”

Section: Introductionmentioning

confidence: 76%

“…The threshold voltage variation amplitude DV th follows a log-normal distribution [2] with median at:…”

Section: Introductionmentioning

confidence: 99%

Random telegraph signal transients in active logarithmic continuous-time vision sensors

Pardo

Boluda

Vegara

2015

Solid-State Electronics

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“…The first model studied here is based on RDF theory proposed by Meindl and Tsuchiya's group [7], [8] while the second model is based on percolation theory and was proposed by Keyes et al [9].…”

Section: Summary Of Analytical Model and Emc Simulation Schemementioning

confidence: 99%

Accurate Model for the Threshold Voltage Fluctuation Estimation in 45-nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants

Ashraf

Vasileska

Wirth

et al. 2011

IEEE Electron Device Lett.

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A physical-based analytical model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50-nm MOSFET is of utmost significance. In this letter, simulation results from two different analytical models and particle-based device ensemble Monte Carlo schemes are used to compute threshold voltage variation in the presence of interface traps at a certain location in the channel. These results provide clear evidence that, without the accurate short-range Coulomb force correction, the analytical models will provide inconsistent V T for traps located near the source of the MOSFET device with 32-nm effective channel length.Index Terms-Random dopant fluctuations (RDFs), random interface trap, short-range Coulomb interaction, threshold voltage variation.

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Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude

Cited by 100 publications

References 25 publications

Scaling trends for random telegraph noise in deca-nanometer Flash memories

Scaling trends for random telegraph noise in deca-nanometer Flash memories

Random telegraph signal transients in active logarithmic continuous-time vision sensors

Accurate Model for the Threshold Voltage Fluctuation Estimation in 45-nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants

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