Discrete and integrated MOS power technologies

Electron‐beam test on power semiconductor devices

“…The trend of microminiaturization and integration of electronic devices has begun in power semiconductor devices (PSCD) (Rossel andBuxo 1985, Stein 1987) to meet the steadily growing demand for intelligent microcomputer-compatible power devices (Smartpower ICs) (Tihanyi 1988). There is an increasing need therefore for spatially resolving test methods which allow potential profiling inside discrete and integrated PSCD.…”

Electronic Raman spectra for d + s wave superconductivity

“…If, in the future, the d + s model appears to indeed better describe the data, one is faced with the dilemma that it should not, if the compound remains tetragonal in the superconducting phase. That is why we raise the question whether a breakdown of tetragonality possibly occurs in the superconducting phase, at least locally, which could be readily checked by phase-sensitive experiments [6], high-sensitivity magnetotorquemetry [9] and thermal conductivity in the presence of a magnetic field within the a-b plane [10].…”

“…We recall here that such a possible breakdown also arose from ref. [9], where, in a high-sensitivity magnetotorquemetry, a twofold term was found in the a-b plane magnetization of Tl(2201), although this compound, like Hg(1212), is also, in principle, tetragonal. The observed angular dependence of the torque in this compound is described with a surprising accuracy by the expression derived within the Ginzburg-Landau theory for the d + s model [11].…”