Disclosing the nature of vacancy defects in α-Ag2WO4

Tracking of structural defects induced by Eu-doping in β-Ag2MoO4: their influences on electrical properties

“…When dealing with an activation energy distribution instead of a single value, the Debye-like response is changed due to the dispersion associated with defects within the semiconductor and a better fitting to the experiments can be obtained by incorporating a Constant Phase Element (CPE) as discussed in. 45 The used equivalent circuit is presented in Fig. S5 †…”

Tuning the morphology to enhance the catalytic activity of α-Ag2WO4 through V-doping

“…56 Our research group has previously investigated the nature of defects in AW. 51,57 Experimental and theoretical studies have indicated that the formation of oxygen vacancies, including neutral (neutral (V x O ), cationic () or doubly-ionized ), is favored in both undoped and V-doped AW samples. Considering the aforementioned reactions, it is possible that in V-doped AW microcrystals, where the lowest energy level of the conduction band is associated with V 3d orbitals, electrons can transfer from V x O to EPR-silent V 5+ , resulting in the generation of paramagnetic V 4+ and species.…”

“…56 Our research group has previously investigated the nature of defects in AW. 51,57 Experimental and theoretical studies have indicated that the formation of oxygen vacancies, including neutral (neutral (V…”