Discharge-time lag in a plasma display—Selection of protection layer (γ surface)

Andoh, S.; Murase, Kazuyuki; Umeda, Satoshi; Nakayama, Noriaki

doi:10.1109/t-ed.1976.18398

Cited by 20 publications

(4 citation statements)

References 3 publications

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Section: Introductionmentioning

confidence: 99%

“…Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades because of high MgO chemical and thermal stability (melting point = 2900 °C), a wide band gap (7.2 eV), and a low dielectric constant (9.8) and refractive index, as well as excellent thermal conductance and diffusion barrier properties. 1 This material has often been used for the production of protective coatings of dielectrics 2,3 and as buffer layers for superconducting or perovskite ferroelectric thin films. [4][5][6][7][8][9] To date, MgO thin films have been deposited by several techniques, including sputtering, 10 laser ablation, [11][12][13] homogeneous precipitation, 14 sol-gel, 15,16 spray pyrolysis, [17][18][19] and chemical vapor deposition (atomic layer deposition (ALD), [20][21][22][23] plasma-enhanced chemical vapor deposition (PECVD), 24 pulsed organometallic molecular beam epitaxy (POMBE), 25 metal organic chemical vapor deposition (MOCVD) [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] ).…”

Section: ' Introductionmentioning

confidence: 99%

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Stability Study of a Magnesium β-Diketonate As Precursor for Chemical Vapor Deposition of MgO

Sartori¹,

Habra

Bolzan³

et al. 2011

Chem. Mater.

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On the basis of the study of the thermal behavior of [Mg(tmhd)2(TMEDA)] (1; tmhd =2,2,6,6-tetramethyl-3,5-heptanedionate; TMEDA = N,N,N′,N′-tetramethylethylenediamine), a novel procedure for magnesium oxide thin film growth has been developed for chemical vapor deposition (CVD) applications. Complementary studies (thermogravimetric measurements and IR and NMR spectroscopy) enabled revelation of the dissociation of TMEDA from 1, confirmed by the detection of both free TMEDA in the vapor phase and less volatile [Mg2(tmhd)4] (2) as a residue after sublimation. The effect of this dissociation is an unwanted changeable sublimation rate of the precursor 1 during the CVD process. The endeavor of a constant deposition rate by simultaneously exploiting the good volatility of 1 was achieved through its synthesis in situ by using 2 with a diamine enriched carrier. Laser reflectance interferometry (LRI) measurements testified that such a method ensured a good and constant deposition rate throughout the growth experiment, independently of the adopted processing conditions. In addition, X-ray diffraction (XRD) measurements revealed the obtainment of textured and polycrystalline MgO coatings on sapphire and on Si(100). The system chemical composition was investigated by X-ray photoelectron spectroscopy (XPS).

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Section: Introductionmentioning

confidence: 99%

Section: ' Introductionmentioning

confidence: 99%

Stability Study of a Magnesium β-Diketonate As Precursor for Chemical Vapor Deposition of MgO

Sartori¹,

Habra

Bolzan³

et al. 2011

Chem. Mater.

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“…However, the calculations yield essentially decreased secondary emission coefficients yNc, yAr in coniparison to PAP 90, which suggests quantitative differences in the physical properties between the MgO layer of P A F 58 and that of P A F 90. The reason for the increased range of nieasured values of P A F 58 has already been mentioned above (see also [24]). The theoretically excepted linear relationship between characteristic tinie and build-up tinie in the investigated parameter ranges could be confirnied by the experiments (Fig.…”

Section: ~301mentioning

confidence: 54%

Discharge Development in ac Plasma Displays

Röpcke

Zahn

1988

Contrib. Plasma Phys.

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The discharge development in ac plasma displays is quantitatively assessed on the basis of comparatively great data. quantitiesunder well defined parameter conditions by means of computer controlled equipment. Investigated are ac plasma displays of three different sizes: PAF 58,90 and PAF 128.The development of an individual discharge in a stationary pulse sequence is described by analyzing the light emitted by the discharge and by comparing the data obtained with theoretical calculations.Essential characteristics of the pulsed light emission of a n ac plasma display discharge are the build-up time t,, i.e. the period from cell voltage switch-on t o the discharge maximum, and the characteristic time z, which is the time constant describing the exponential growth of the discharge in its amplification range.The theoretical model shows the transition, during discharge build up, from directionization of neon atoms, mainly a t low t values, to ionization essentially via the Penning effect a t high t values. Therefore the effective Townsend ionization coefficient is dependent on 7. The measured time constants of the discharge build up are in good agreement with the calculated values. Adaption between measurement and calculation is achieved by variation of the secondary emission coefficient y of the cathode.

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“…MgO nanoparticles have attracted considerable attention recently because of their unique physical and chemical properties, which is used for many applications that require chemical stability and uniformity in particle size [1,2]. MgO is an exceptionally important material for many applications and are mainly depend on the structure and particle size, which were detailed in the literature [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. In this work, we synthesized nanocrystalline MgO using sol-gel technique and characterized using well established experimental techniques.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Nanocrystalline MgO for Optical Applications Using Sol-Gel Method

Ravichandran

Vaishnavi

Nedumaran

2013

AMR

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This paper describes the preparation and characterization of nanocrystalline Magnesium Oxide (MgO) using sol-gel technique for optical applications. The prepared nanocrystalline MgO was chemically homogeneous, very pure and specifically hydroxylated and was characterized by standard techniques. The size of the prepared nanoparticle was found to be 27.38 nm ± 0.65 nm and exhibited a face centered–cubic structure and exhibited two lifetimes viz., 1 = 0.24 ns and 2 = 8.9 ns. Its binding energy was found to be 50.9 eV, which showed the formation of single phase MgO on the surface. It behaved as semiconductor over the temperature range of 500 °C to 660 °C and as perfect insulator in the temperature range 100 °K to 300 °K.

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Discharge-time lag in a plasma display—Selection of protection layer (γ surface)

Cited by 20 publications

References 3 publications

Stability Study of a Magnesium β-Diketonate As Precursor for Chemical Vapor Deposition of MgO

Stability Study of a Magnesium β-Diketonate As Precursor for Chemical Vapor Deposition of MgO

Discharge Development in ac Plasma Displays

Synthesis and Characterization of Nanocrystalline MgO for Optical Applications Using Sol-Gel Method

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