Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate

Yamaoka, Suguru; Diamantopoulos, Nikolaos-Panteleimon; Nishi, Hidetaka; Nakao, Ryo; Fujii, T.; Takeda, Koji; Hiraki, Tatsurou; Tsurugaya, Takuma; Kanazawa, Shigeru; Tanobe, Hiromasa; Kakitsuka, Takaaki; Tsuchizawa, Tai; Koyama, Fumio; Matsuo, Shinji

doi:10.1038/s41566-020-00700-y

Cited by 141 publications

(74 citation statements)

References 35 publications

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“…As discussed in the introduction, in the recent years, emerging longitudinal cavity designs that enable the DL and PPR effects can alleviate this tradeoff [9][10][11][12][13][14][15][16][17]. In such a case, the DL and/or PPR effects effectively enhance the high-frequency components of the modulated signal, leading to an extension of the 3-dB bandwidths beyond those allowed by pure CPR dynamics.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, a solution has emerged that effectively alleviates this power-bandwidth tradeoff by introducing detuned-loading (DL) and photon-photon resonance (PPR) effects via specialized longitudinal laser designs [9][10][11][12][13][14][15][16][17]. The DL and PPR effects can be used to effectively boost the high-frequency components of the modulated signal and effectively extend the 3-dB bandwidth of the DML beyond the levels allowed by the intrinsic CPR effect.…”

Section: Introductionmentioning

confidence: 99%

“…The DL and PPR effects can be used to effectively boost the high-frequency components of the modulated signal and effectively extend the 3-dB bandwidth of the DML beyond the levels allowed by the intrinsic CPR effect. In particular, in the recent years, two methods have attracted attention to generate these effects: (a) a method based on including a passive feedback waveguide [12][13][14][15][16][17] and (b) a method based on including a distributed Bragg reflector (DBR) [9][10][11][12]. Based on the first method (i.e., passive feedback), we have recently demonstrated DMLs with record-high bandwidths in excess of 100 GHz [17], capable of accommodating net data rates up to 325 Gbps (gross rates > 400 Gbps) [18].…”

Section: Introductionmentioning

confidence: 99%

“…In particular, in the recent years, two methods have attracted attention to generate these effects: (a) a method based on including a passive feedback waveguide [12][13][14][15][16][17] and (b) a method based on including a distributed Bragg reflector (DBR) [9][10][11][12]. Based on the first method (i.e., passive feedback), we have recently demonstrated DMLs with record-high bandwidths in excess of 100 GHz [17], capable of accommodating net data rates up to 325 Gbps (gross rates > 400 Gbps) [18]. These DMLs were based on our novel membrane-III-V-on-SiC technology, which enabled record-high intrinsic CPR-based 3-dB bandwidths of around 60 GHz, due to the high-thermal conductivity properties of the SiC substrate [17].…”

Section: Introductionmentioning

confidence: 99%

“…Based on the first method (i.e., passive feedback), we have recently demonstrated DMLs with record-high bandwidths in excess of 100 GHz [17], capable of accommodating net data rates up to 325 Gbps (gross rates > 400 Gbps) [18]. These DMLs were based on our novel membrane-III-V-on-SiC technology, which enabled record-high intrinsic CPR-based 3-dB bandwidths of around 60 GHz, due to the high-thermal conductivity properties of the SiC substrate [17]. Therefore, the bandwidth enhancement due to the DL and PPR effects on such "on-SiC" DMLs was around 1.8x times.…”

Section: Introductionmentioning

confidence: 99%

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47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

et al. 2021

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Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are in need. Towards this direction we have previously demonstrated directly-modulated lasers (DMLs) capable of operating at 50 Gbps/lane with sub-pJ/bit efficiencies based on our novel membrane-III-V-on-Si technology. However, there exists an inherent tradeoff between modulation speed and power consumption due to the carrier-photon dynamics in DMLs. In this work, we alleviate this tradeoff by introducing photon–photon resonance dynamics in our energy-efficient membrane DMLs-on-Si design and demonstrate a device with a maximum 3-dB bandwidth of 47.5 GHz. This denotes a bandwidth increase of more than 2x times compared to our previous membrane DMLs-on-Si. Moreover, the DML is capable of delivering 60-GBaud PAM-4 signals under Ethernet’s KP4-FEC threshold (net data rate of 113.42 Gbps) over 2-km of standard single-mode fiber transmission. DC energy-efficiencies of 0.17 pJ/bit at 25 °C and 0.34 pJ/bit at 50 °C have been achieved for the > 100-Gbps signals. Deploying such DMLs in an integrated multichannel transceiver should ensure a smooth evolution towards Terabit-class Ethernet links and on-board optics subsystems.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

et al. 2021

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Room‐Temperature Single‐Mode Plasmonic Perovskite Nanolasers with Sub‐Picosecond Pulses

Li,

Tao,

Hou

et al. 2024

Adv Funct Materials

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With the explosive growth of communication traffic, increasing the modulation bandwidth of semiconductor lasers has attracted significant attention. However, after rapid progress is achieved, further increasing the modulation bandwidth of semiconductor lasers is hampered by the slow charge‐carrier dynamics. Here, a room temperature, single‐mode perovskite nanolaser with sub‐picosecond pulses, enabled by high Purcell enhancement is reported. This enhancement is achieved via transferring an atomically smooth perovskite nanoplatelet onto the surface of an ultra‐smooth SiO2/Ag film. This nanolaser features a low mode volume (V) as low as 0.137 µm3, a high‐quality factor (Q) up to 2180, and a low lasing threshold of 36.65 µJ cm−2. The Q value of the laser is one order of magnitude higher than that of state‐of‐the‐art nanolasers. The smoothness of both the nanoplatelet and the SiO2/Ag film in the laser is critical to achieving a high Purcell enhancement. Polarization analysis reveals that the laser emission consists of a transvere‐magnetic (TM) polarized surface plasmon mode and a transverse‐electric (TE) polarized photonic mode. Furthermore, ultrafast charge‐carrier dynamics indicate the surface plasmon decay time can be as short as 0.6 ± 0.4 ps due to the high Purcell enhancement. This work opens up the possibility of developing nanolasers with high bandwidths and ultra‐small sizes.

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In‐Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI

Xue,

Li,

Wang

et al. 2023

Laser & Photonics Reviews

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Hetero‐epitaxy for integration of efficient III‐V lasers on silicon can enable wafer‐scale silicon photonic integrated circuits, which can unleash the full advantages of silicon photonics in production on large silicon wafers with low cost, high throughput, and large bandwidth and large‐scale integration. In this work, efficient III‐V distributed feedback (DFB) lasers selectively grown on (001) silicon‐on‐insulator (SOI) wafers are presented. The selective hetero‐epitaxy of sufficiently large areas of III‐V segments allows the demonstration of DFB lasers on the SOI wafer. The fabricated DFB lasers feature a co‐planar configuration with the Si layer, allowing for efficient coupling between III‐V lasers and Si waveguides. The unique III‐V‐on‐insulator structure also provides strong optical confinement for the lasers. Gratings are designed and fabricated with minimal non‐radiative recombination and a simple process with good tolerance. The optically pumped DFB laser has a low lasing threshold of around 17.5 µJ cm−2, stable single‐mode lasing at 1.5 µm, a side‐mode‐suppression‐ratio of over 35 dB, and a spontaneous emission factor of 0.7. The results here demonstrate a step forward towards wafer‐scale integration with monolithically grown lasers, thus outlining the prospect of fully integrated Si photonics.

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Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate

Cited by 141 publications

References 35 publications

47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

Room‐Temperature Single‐Mode Plasmonic Perovskite Nanolasers with Sub‐Picosecond Pulses

In‐Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI

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