2015
DOI: 10.1117/12.2087398
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Directed self-assembly of topcoat-free, integration-friendly high-xblock copolymers

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Cited by 4 publications
(4 citation statements)
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“…SVA and triblock DSA are examples of the growing arsenal of materials and processes that enable sub-10 nm DSA patterning; this arsenal also includes top-coat DSA and high-χ, top-coat-free materials . While each method has specific parameters that influence the BCP assembly, in all of these methods, the BCP interaction with the BCP–guiding pattern interface is crucial for successful directed assembly.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…SVA and triblock DSA are examples of the growing arsenal of materials and processes that enable sub-10 nm DSA patterning; this arsenal also includes top-coat DSA and high-χ, top-coat-free materials . While each method has specific parameters that influence the BCP assembly, in all of these methods, the BCP interaction with the BCP–guiding pattern interface is crucial for successful directed assembly.…”
Section: Discussionmentioning
confidence: 99%
“…SVA and triblock DSA are examples of the growing arsenal of materials and processes that enable sub-10 nm DSA patterning; 27 this arsenal also includes top-coat DSA 51 and high-χ, top-coat-free materials. 52 While each method has specific parameters that influence the BCP assembly, in all of these methods, the BCP interaction with the BCP−guiding pattern interface is crucial for successful directed assembly. Therefore, probing the BCP structure and its fluctuations at the BCP−guiding pattern interface is necessary to fully describe high-χ DSA assembly and enable better understanding of the assembly processes.…”
Section: Discussionmentioning
confidence: 99%
“…With domain sizes reaching the sub-10 nm scale, dry plasma etching becomes extremely challenging due to strong aspect ratio dependent etching phenomena that considerably limit the efficiency of etching in such confined environments. Recent successes notwithstanding, , this will generally require new approaches to create arrays of ultrasmall features with controlled shape from self-assembled block polymer templates. Specific inclusion of inorganic precursors in preformed block-polymer systems followed by the elimination of the polymer scaffold presents attractive opportunities.…”
Section: Perspective Going Forwardmentioning
confidence: 99%
“…In our paper of SPIE 2015, we introduced high quality organic lamellae-forming high- block copolymers of HC series offering an L/S patterning platform for feature size ranging from 8.5 nm to 13 nm [5]. Vertically oriented nanodomains of the HC series were produced by simple thermal annealing process (Temp.…”
Section: Introductionmentioning
confidence: 99%