Directed self-assembly materials for high resolution beyond PS-<i>b</i>-PMMA

Hirahara, Eri; Paunescu, Margareta; Polishchuk, Orest; Jeong, EunJeong; Ng, Edward W.; Shan, Jianhui; Yin, Jian; Kim, Jihoon; Cao, Yi; Li, Jin; Hong, Sung-Eun; Baskaran, Durairaj; Lin, Guanyang

doi:10.1117/12.2220424

Cited by 2 publications

(2 citation statements)

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“…An example of a diblock copolymer is polystyrene-block-poly(methyl methacrylate), PS-b-PMMA, formed by a chain of PS and a chain of PMMA covalently bonded. This BCP is amongst the most studied for nanolithography applications, as both blocks are polymers with well-known etch properties, easy to handle, present reasonable temperature ranges for annealing and similar affinity to air [ 38 , 39 , 40 ]. Extensive characterization of self-assembled PS-b-PMMA thin films has been carried out regarding annealing conditions, kinetics, defectivity, line-edge roughness and nanomechanical properties of the blocks [ 22 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 ].…”

Section: Principles Of the Dsa Of Block Copolymersmentioning

confidence: 99%

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

et al. 2020

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Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

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Section: Principles Of the Dsa Of Block Copolymersmentioning

confidence: 99%

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

et al. 2020

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“…Extreme Ultraviolet (EUV) lithography, Directed Self-Assembly (DSA), Electron beam (E-beam) lithography and multi patterning technology of ArF immersion lithography are being investigated for advanced node devices [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Novel Rinse Material to Improve EUV Lithography Performance

Yamamoto

Matsuura

Yashima

et al. 2016

J. Photopol. Sci. Technol.

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Extreme ultraviolet lithography is one of the most promising processes for high volume manufacturing of sub-10nm node device. Currently, studies on resist to achieve higher resolution have been intensively conducted. However, to achieve high resolution, it is also important to take care of resist development process in which pattern collapse and pattern bridging are observed commonly. In such a state, rinse material is known to mitigate pattern collapse and pattern bridging.In this paper, we studied the effectiveness of rinse material against lithography performance with two parameters, such as surface tension and resist affinity. As the result, the best rinse material achieved better resist resolution of 16 nm half pitch, larger process window and higher resist sensitivity by 5.5% than DIW.

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Directed self-assembly materials for high resolution beyond PS-b-PMMA

Cited by 2 publications

References 10 publications

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Novel Rinse Material to Improve EUV Lithography Performance

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