Directed self-assembly defectivity assessment. Part II

Bencher, Chris; Yi, He; Zhou, Jessica; Cai, Man-Ping; Smith, Jeffrey; Miao, Liyan; Montal, Ofir; Blitshtein, Shiran; Lavi, Alon; Dotan, Kfir; Dai, Huixiong; Cheng, Joy Y.; Sanders, Daniel P.; Tjio, Melia; Holmes, Steven J.

doi:10.1117/12.917993

Cited by 55 publications

(50 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2,4 As shown in Fig. 1(d), the relatively thick PS layer remains between the cylindrical PMMA domain and the bottom surface.…”

Section: Introductionmentioning

confidence: 97%

“…2 One of the remaining issues for these DSA processes is to reduce the defect level. 3,4 According to the International Technology Roadmap for Semiconductors (ITRS), the defect level for the current DSA processes is still far from the manufacturing requirement. 5 The DSA hole shrink process which we have investigated in this study is implemented as follows (Fig.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optimization of directed self-assembly hole shrink process with simplified model

Yoshimoto

Fukawatase

Ohshima

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

Abstract. Application of the directed self-assembly of block copolymer to the hole shrink process has gained large attention because of the low cost and high potential for sublithographic patterning. In this study, we have employed a simplified model, called the Ohta-Kawasaki model to find the optimal process conditions, which minimize the morphological defects of the diblock copolymer, PS-b-PMMA. The model parameters were calibrated with cross-sectional transmission electron microscopy images. Our simulation results revealed that it is difficult to eliminate the morphological defects (i.e., PS residual layer) by only varying the shape of the guide hole. It turned out that changing the affinity of the bottom surface of the guide hole from "PMMA attractive" to "neutral" is a more effective way to obtain a reasonably wide, defect-free process window. Note that our simulations are not only computationally inexpensive, but are also comparable to the other detailed models such as the selfconsistent field theory; they may also be feasible for large-scale simulations such as the hotspot analysis over a large area. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

show abstract

“…2,4 As shown in Fig. 1(d), the relatively thick PS layer remains between the cylindrical PMMA domain and the bottom surface.…”

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Optimization of directed self-assembly hole shrink process with simplified model

Yoshimoto

Fukawatase

Ohshima

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

show abstract

“…DSA process takes advantage of the self-assembling properties of materials, such as block copolymers (BCP), to reach nanoscale dimensions while meeting the constraints of current manufacturing. Defectivity is one of the keys to implement DSA in manufacturing [3][4][5][6]. In this paper, we focus on DSA defectivity study of contact hole shrinkage, and wafer-level defectivity of DSA shrink at each stage of the DSA patterning was investigated (Fig.…”

Section: Introductionmentioning

confidence: 99%

Defectivity Study for Directed Self-Assembly (DSA) Contact Hole Shrink

Ko¹,

Lo²,

Wu³

et al. 2016

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

“…Annealing strategies that mitigate preferential top interface interactions have been developed that utilize solvent vapor, which both plasticizes the BCP to induce self-assembly and creates nonpreferential top interface interactions. 4 We view traditional thermal annealing as a highly preferable process because it is both compatible with technology widely utilized in industry today 5,6 and accesses thermodynamically minimum energy states. Control of the top interface is thus crucial to translate current thermal annealing processes to Si-BCPs.…”

Section: Introductionmentioning

confidence: 99%