2006
DOI: 10.1116/1.2221318
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Directed nucleation of ordered nanoparticle arrays on amorphous surfaces

Abstract: Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ∼20–24nm pores and a 6×1010cm−2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition at 800K produced Ge nanoparticles using 6–19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth, nanoparticle density is approximately one particle per pore.

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Cited by 12 publications
(12 citation statements)
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“…This bottom-up approach to nanofabrication is extremely versatile; BCP films have been used as sacrificial contact masks for thin-film lithography to produce nanometer-scale periodic patterns in a wide variety of materials, [1][2][3] which have been investigated in the data storage sector for high-density magnetic [4,5] and nano-crystal FLASH memories. [6,7] While the nanoscale domains (spheres, cylinders, etc.) typically organize into grains of micron or smaller size, with no overall orientation, several methods have been developed to direct the domain orientation, or simply increase the grain size, in BCP films.…”
mentioning
confidence: 99%
“…This bottom-up approach to nanofabrication is extremely versatile; BCP films have been used as sacrificial contact masks for thin-film lithography to produce nanometer-scale periodic patterns in a wide variety of materials, [1][2][3] which have been investigated in the data storage sector for high-density magnetic [4,5] and nano-crystal FLASH memories. [6,7] While the nanoscale domains (spheres, cylinders, etc.) typically organize into grains of micron or smaller size, with no overall orientation, several methods have been developed to direct the domain orientation, or simply increase the grain size, in BCP films.…”
mentioning
confidence: 99%
“…Selective growth of Si on arrays of Si 3 N 4 surfaces defined through a sacrificial SiO 2 hard mask is qualitatively similar to the selective growth of Ge on HfO 2 defined through a sacrificial SiO 2 mask [7]. In both cases the inability of Si or Ge to accumulate on SiO 2 , yet accumulate on the growth surface, enables selective deposition at the bottom of the features defined through the SiO 2 mask.…”
Section: Discussionmentioning
confidence: 95%
“…(d) The negative image of Part c with circles around the 16 black spots that correspond to particles greater than 5 nm in diameter. nanoparticles to better control the process [7] and it permits a wide range of radical fluxes to be explored to optimize the process [23].…”
Section: Discussionmentioning
confidence: 99%
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“…Surface chemistry governs the formation of nanocrystals. Directed nucleation and growth of nanocrystals is examined within macroscopic (~100 μιη) to nanoscopic (~20 nm) range [56][57]. Below a critical size, nanocrystal formation is sharply affected.…”
Section: The Classical Crystal Growth Kineticsmentioning
confidence: 99%