Direct thermal strain measurements in electronic packages

Bastawros, A.F.; Voloshin, Arkady

doi:10.1109/stherm.1990.68485

Cited by 11 publications

(6 citation statements)

References 12 publications

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“…Due to large temperature gradients, CTE mismatches between the silicon die and the aluminum bond wire, and stress caused by the global deformation of the device [9], strain in the out-of-plane direction (with respect to the die) causes a crack to form-leading to failure. Because of this, it is important to measure the displacement/strain at the wire-bond interface and in the direction that causes failure.…”

Section: Espi On Power Semiconductorsmentioning

confidence: 99%

“…A great deal of work focusing on device strain has been performed using Raman spectroscopy [7], [8], moiré interferometry [9], and X-ray topography [12]. However, direct strain measurement of an active switching device has been achieved in only one instance, where silicon die layer critical strain was measured and FE models were validated with near infrared (IR) photoelasticity [1].…”

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confidence: 99%

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In Situ Measurement of Wire-Bond Strain in Electrically Active Power Semiconductors

Avery

Lorenz

2013

IEEE Trans. on Ind. Applicat.

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Thermal-mechanical displacement/strain in power semiconductor devices is investigated using electronic speckle pattern interferometry (ESPI). Validated models for thermalmechanical strain are key to improving the reliability of power electronics modules. ESPI is a noncontact optical technique capable of providing surface displacement measurements with submicrometer resolution. The significant contribution of this paper is an experimental methodology by which wire-bond displacement/ strain can be measured in an active device. Simultaneous in-plane and out-of-plane measurements are combined to accurately measure the displacement field across the wire-bond interface, while decoupling thermal-mechanical deformation not related to wire-bond strain (such as base plate thermal expansion). Experimental results verify the electrical-loss-driven thermalmechanical displacement/strain in an electrically active discrete insulated gate bipolar transistor switching at 5 kHz.

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Section: Espi On Power Semiconductorsmentioning

confidence: 99%

mentioning

confidence: 99%

In Situ Measurement of Wire-Bond Strain in Electrically Active Power Semiconductors

Avery

Lorenz

2013

IEEE Trans. on Ind. Applicat.

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“…For deformation analysis by using the moiré fringes, automatically digital image processing is always expected by computations, that should enable the solution of the deformation phases to be a kind of field processing rather than by using only the integral or half orders of the black and white fringes. Any interpolation of the fractional fringe orders may need a manual processing with time consumption to search and to number the integral fringes, whose determination of fringe-order variation depends strongly on the understanding of the pattern knowledge (Bastawros and Voloshin, 1990). The phase stepping technique has provided a useful tool to automatically obtain the deformation phases by using the intensity variations resulting from the illumination changes of the moiré interferometry (Wang and Hassell, 1997).…”

Section: Introductionmentioning

confidence: 99%

Fourier and wavelet transform analysis of moire fringe patterns in electronic packaging

Xiong

Zhang

et al. 2004

Microelectronics International

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In this paper, two transform methods, the Fourier transform (FT) and the wavelet transform (WT) methods, are utilized to process moiré fringes for the strain analysis of electronic packaging. With the introduction of fringe carriers, those transform techniques need only one fringe pattern for each deformation state. The strain modulation to the carrier frequency can be subtracted by filtering as the pattern is transformed into spectrum domain by the fast‐FT processing, and the deformation field can thus be restored by the inverse FT transform after spectral shifting. The WT method expands the pattern information involved in the fringe carrier in both spatial domain and spectral domain to analyze the deformation distribution in this combined space. By changing the transform scales in the processing, the wavelet transform offers multi‐resolution analysis for the deformation field with high gradients.

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“…Moire interferometry has been used as a tool to investigate the reliability of electronic packages due to extensive efforts in this area by Bastawros and Voloshin [52,[74][75][76], and researchers from IBM [56][57][77][78][79]. Several of these investigations were conducted to determine the thermally induced in-plane displacements and strains occurring to exposed cross-sections taken from BGA, column grid array, and flip chip packages which contain multiple solder joints.…”

Section: Fig 2 4 Schematic Diagram Of Moire Interferometrymentioning

confidence: 99%

“…The difficulty of grating reproduction on the specimen surface, the misalignment of the optical axes of the illuminating laser beams and the diffractive wave fronts of the grating are some issues. The null field of the moire fringe patterns is difficult to be obtained before the thermal loading is introduced so that the influence of those initial fringes must be subtracted from the final displacement field through data post processing in order to obtain the net thermally induced displacements [74]. Sometimes, the whole field fringe interpretation is a tough job through only one fringe interferogram due to the need of manual processing and professional knowledge or experience.…”

Section: Fig 2 4 Schematic Diagram Of Moire Interferometrymentioning

confidence: 99%

Micro-deformation characterization of electronic packaging materials and assemblies

Sun¹

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I wish to express my gratitude and appreciation to my supervisor AlP John, H.L. Pang, who has provided me not only invaluable professional knowledge in mechanics of electronic packaging, but also encouragement, support, and inspirations for exploring this research topic, as well as improving myself. I thank Dr. Shi Xunqing for bringing me to Singapore and into the area of digital image correlation for deformation measurements, where I located my research interests. His guidance made my academic dream in Nanyang Technological University (NTU) come true. I would also like to thank my former group manager Stephen, c.K. Wong in Singapore Institute of Manufacturing Technology (SIMTech) for his support when I worked in SIMTech. Many sincere thanks go to my former colleagues in SIMTech and in NTU who have provided much useful assistance during the experimental part of this research and invaluable discussion. These include Dr.

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Direct thermal strain measurements in electronic packages

Cited by 11 publications

References 12 publications

In Situ Measurement of Wire-Bond Strain in Electrically Active Power Semiconductors

In Situ Measurement of Wire-Bond Strain in Electrically Active Power Semiconductors

Fourier and wavelet transform analysis of moire fringe patterns in electronic packaging

Micro-deformation characterization of electronic packaging materials and assemblies

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