Direct Synthesis of Single-Phase p-Type SnS by Electrodeposition from a Dicyanamide Ionic Liquid at High Temperature for Thin Film Solar Cells

Steichen, Marc; Djemour, Rabie; Gütay, Levent; Guillot, Jérôme; Siebentritt, Susanne; Dale, Phillip J.

doi:10.1021/jp311552g

Cited by 72 publications

(63 citation statements)

References 58 publications

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“…solution containing SnCl 2 at high temperature [48]. The first solar cell presented using this deposition technique showed an efficiency of 0.17% [48] (V oc = 155 mV, J sc = 3.42 mA/cm2 and FF = 31.8%).…”

Section: Introductionmentioning

confidence: 96%

“…However it is possible to prepare the CZTS thin film material with a more industrially-scalable and environmentally-friendly process, such as sputtering [7]. solution containing SnCl 2 at high temperature [48]. The first solar cell presented using this deposition technique showed an efficiency of 0.17% [48] (V oc = 155 mV, J sc = 3.42 mA/cm2 and FF = 31.8%).…”

Section: Introductionmentioning

confidence: 99%

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SnS Thin Film Solar Cells: Perspectives and Limitations

et al. 2017

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Abstract:Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected with presence of toxic and/or rare elements) are still limiting their market diffusion. For this reason new thin film materials, such as Cu 2 ZnSnS 4 or SnS, have been introduced so that expensive In and Te, and toxic elements Se and Cd, are substituted, respectively, in CuInGaSe 2 and CdTe. To overcome the abundance limitation of Te and In, in recent times new thin film materials, such as Cu 2 ZnSnS 4 or SnS, have been investigated. In this paper we analyze the limitations of SnS deposition in terms of reproducibility and reliability. SnS deposited by thermal evaporation is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. The raw material is also analyzed and a different composition is observed according to the different number of evaporation (runs). The sulfur loss represents one of the major challenges of SnS solar cell technology.

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Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

SnS Thin Film Solar Cells: Perspectives and Limitations

et al. 2017

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“…Presently, many methods are employed to fabricate SnS and SnSe nanomaterials. Typical synthetic methods include chemical bath deposition [7][8][9] , thermal evaporation 10,11 , electrodeposition 12,13 , spray pyrolysis technique 14,15 , sputtering 16 , etc. Different morphological SnS and SnSe nanomaterials were prepared by using the above methods, including nanoparticles 17,18 , nanorods 19 , nanoflakes 20 , nanofibers 21 , films 2,22 , nanoplate 23 , etc.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Characterization and Photocatalytic Performance of SnS Nanofibers and SnSe Nanofibers Derived from the Electrospinning-made SnO2 Nanofibers

Dong

et al. 2017

Mat. Res.

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SnO 2 nanofibers were fabricated by calcination of the electrospun PVP/SnCl 4 composite nanofibers. For the first time, SnS nanofibers and SnSe nanofibers were successfully synthesized by doublecrucible sulfurization and selenidation methods via inheriting the morphology of SnO 2 nanofibers used as precursors, respectively. X-ray diffraction (XRD) analysis shows SnS nanofibers and SnSe nanofibers are respectively pure orthorhombic phase with space group of Pbnm and Cmcm. Scanning electron microscope (SEM) observation indicates that the diameters of SnS nanofibers and SnSe nanofibers are respectively 140.54±12.80 nm and 96.52±14.17 nm under the 95 % confidence level. The photocatalytic activities of samples were studied by using rhodamine B (Rh B) as degradation agent. When SnS or SnSe nanofibers are employed as the photocatalysts, the respective degradation rates of Rh B solution under the ultraviolet light irradiation after 200 min irradiation are 92.55 % and 92.86 %. The photocatalytic mechanism and formation process of SnS and SnSe nanofibers are also provided. More importantly, this preparation technique is of universal significance to prepare other metal chalcogenides nanofibers.

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“…Tin (II) monosulfide (SnS), a binary metal (IV-VI) compound semiconductor offers many attributes. SnS is a p-type with high optical absorption coefficient >10 4 cm -1 and a band gap of Eg =1.1-1.32 eV making it a favourable material for PV applications and optical devices.Depending on the deposition temperature and the percentage of precursors the SnS phase is accompanied with other Sn complexes such as Sn2S3 and SnS2 and thus achieving a single phase material can be a challenge.Tin sulfide thin films have been synthesised by several methods such as thermal evaporation, chemical bath deposition, spray pyrolysis, sulfurization and electrodeposition [1]. Among these, atmospheric pressure chemical vapour deposition (APCVD) which is a low cost and high-throughput deposition method, is attractive for large scale production.…”

mentioning

confidence: 99%

“…Tin sulfide thin films have been synthesised by several methods such as thermal evaporation, chemical bath deposition, spray pyrolysis, sulfurization and electrodeposition [1]. Among these, atmospheric pressure chemical vapour deposition (APCVD) which is a low cost and high-throughput deposition method, is attractive for large scale production.…”

mentioning

confidence: 99%

Phase engineering of tin sulphide grown by atmospheric pressure chemical vapour deposition at ambient temperature

Zaidy

Craig

Hewak

et al. 2017

2017 Conference on Lasers and Electro-Optics Europe &Amp; European Quantum Electronics Conference (CLEO/Europe-EQEC)

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Considerable efforts have been made in the search for new photovoltaic (PV) materials that satisfy requirements such as low toxicity, optimum energy gap, high stability as well as the ability to synthesize by a wide range of methods. Tin (II) monosulfide (SnS), a binary metal (IV-VI) compound semiconductor offers many attributes. SnS is a p-type with high optical absorption coefficient >10 4 cm -1 and a band gap of Eg =1.1-1.32 eV making it a favourable material for PV applications and optical devices.Depending on the deposition temperature and the percentage of precursors the SnS phase is accompanied with other Sn complexes such as Sn2S3 and SnS2 and thus achieving a single phase material can be a challenge.Tin sulfide thin films have been synthesised by several methods such as thermal evaporation, chemical bath deposition, spray pyrolysis, sulfurization and electrodeposition [1]. Among these, atmospheric pressure chemical vapour deposition (APCVD) which is a low cost and high-throughput deposition method, is attractive for large scale production. In this work, we demonstrate a novel phase engineering process of tin sulphide thin films grown by APCVD at room temperature using SnCl4 precursor and H2S/Ar gas mixture. Additionally, we explore the effect of post annealing treatment on the phase of the thin films.The deposition was achieved by using a metal halide precursor, which allows the deposition to take place at room temperature, despite most studied cases, where the deposited films were formed at relatively high temperatures. A further post-deposition annealing process was performed in a tubular furnace in a 6% H2/Ar atmosphere varying the temperature from 250 to 450 °C. The impact of annealing temperature on the phase and quality of material were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and scanning electron microscope (SEM). The spectral behaviour of the optical energy gap as a function of annealing temperature was obtained by UV-vis transmission and absorption spectra. Figure 1(a) shows the XRD spectra of all the samples under study with SnSx phases appearing as a function of the annealing temperature. Amorphous-to-polycrystalline phase transition occurred after post-annealing treatment at 300 o C and a signal intensity is observed at 14.9 o corresponding to the crystallographic plane (001) which indicates a hexagonal SnS2 phase. With increasing annealing temperature loss of sulphur occurs leading to a change in the Sn/S ratio which results in a single orthorhombic SnS phase that starts to form at 400 o C. XPS and Raman spectra support the existence of pure phase SnS at temperatures between 400-450 o C. UV−vis spectroscopy shown in figure 1(b) reveals that the band gap of the annealed tin sulphide thin films varies with the S concentration and can be tuned in the range of 1.03−3.14 eV. The comparison between structural and optical measurements show that an increased annealing temperature of up to 450 °C can produce high quality single tin SnS phas...

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Direct Synthesis of Single-Phase p-Type SnS by Electrodeposition from a Dicyanamide Ionic Liquid at High Temperature for Thin Film Solar Cells

Cited by 72 publications

References 58 publications

SnS Thin Film Solar Cells: Perspectives and Limitations

SnS Thin Film Solar Cells: Perspectives and Limitations

Synthesis, Characterization and Photocatalytic Performance of SnS Nanofibers and SnSe Nanofibers Derived from the Electrospinning-made SnO2 Nanofibers

Phase engineering of tin sulphide grown by atmospheric pressure chemical vapour deposition at ambient temperature

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