“…Colloidal semiconductor nanocrystals capable of supporting excess delocalized charge carriers are an important class of emerging electronic materials − because of the potential for hosting tunable carrier densities. Carrier concentrations can often be modulated via defect incorporation and activation during synthesis ,− or via post-synthetic redox or photoredox manipulations. ,,− These techniques allow for access to tunable photophysical properties in semiconductor nanocrystals, including localized surface plasmon resonances (LSPRs) in the mid- or near-IR. ,− ,− Nanocrystals in which the LSPR absorption is derived from delocalized holes , are relatively uncommon, with copper chalcogenides (CuE or Cu 2– x E; E = S, Se, and Te) being the most widely studied. ,,,,,− In these materials, delocalized holes arise to compensate for copper vacancies, resulting in degenerately doped semiconductors with LSPR absorption in the near-IR that has been exploited for surface-enhanced Raman scattering, plasmon-enhanced chemical conversion, and ultrafast optical switching. , It was recently demonstrated that copper vacancies in copper phosphide (Cu 3– x P) nanocrystals also generate excess delocalized holes and near-IR LSPR absorption. , In contrast to the copper chalcogenides, which often undergo phase transformations with dynamic redox tuning, Cu 3– x P exists as the sole copper-rich phase. This phase-stability and potential for distinct surface chemistry make Cu 3– x P a unique system for colloidal semiconductor nanoplasmonics.…”