Direct photopatterning of metal oxide materials using photosensitive organometallic precursor films

Barstow, Sean J.; Jeyakumar, Augustin; Henderson, Clifford L.

doi:10.1117/12.472317

Cited by 6 publications

(3 citation statements)

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“…Upon UV exposure, the organic ligands of the precursor molecules are cleaved, resulting in the formation of an amorphous metal oxide. The remaining unexposed precursor material may be subsequently washed away by rinsing with a developer solvent [9]. The photosensitivity of these materials allows one to selectively deposit metal oxide structures at low temperatures (1) without requiring the deposition of blanket oxides via sputtering, CVD, or other means and (2) without requiring subsequent separate lithographic and etching steps that are needed to pattern blanket films.…”

Section: Introductionmentioning

confidence: 99%

Photodefinable Metal Oxide Dielectrics: A Novel Method for Fabricating Low Cost RF Capacitive MEMS Switches

et al. 2003

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In this paper, a novel approach for fabricating low cost capacitive RF MEMS switches using directly photodefinable high dielectric constant metal oxides has been developed. In this approach, a radiation sensitive metal-organic precursor is deposited via spin coating and converted patternwise to a high dielectric constant metal oxide via ultraviolet exposure. The feasibility of this approach is demonstrated by fabricating bridge-type and cantilever-type switches with a nitride/metal-oxide/nitride dielectric film stack. These switches exhibited significantly higher isolation and load capacitances as compared to comparable switches fabricated using a simple silicon nitride dielectric.

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Section: Introductionmentioning

confidence: 99%

Photodefinable Metal Oxide Dielectrics: A Novel Method for Fabricating Low Cost RF Capacitive MEMS Switches

et al. 2003

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“…Upon UV exposure, the organic ligands of the precursor molecules are cleaved, resulting in the formation of an amorphous metal oxide. The remaining unexposed precursor material is subsequently washed away by rinsing with a developer solvent [10]. The photosensitivity of these materials allows one to selectively deposit metal oxide structures at low temperatures without requiring the deposition of blanket oxides via sputtering, chemical vapor deposition (CVD), or other means, and without requiring subsequent separate lithographic and etching steps that are needed to pattern blanket films.…”

Section: Introductionmentioning

confidence: 99%

MEMS Capacitive Switch Fabrication using Photodefinable Metal Oxide Dielectrics

Henderson¹,

Romeo²,

Wang³

et al. 2006

ECS Trans.

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In this paper, design, fabrication and measurement of reliable low cost capacitive RF MEMS switches with a novel fabrication approach using direct photo-definable high-k metal oxides are presented. In this approach, a radiation sensitive metal- organic precursor is deposited via spin coating and converted to a high-k metal oxide via ultraviolet exposure. Measurements of the bridge-type switches have been done up to 40 GHz. These switches are reliable (> 340 million cycles) and exhibited low insertion loss (around 0.3 dB at 20 GHz) and better isolation (around 24 dB at 20 GHz) at frequencies below resonant frequency as compared to switches fabricated using a simple silicon nitride dielectric.

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“…Upon UV exposure, the organic ligands of the precursor molecules are cleaved, resulting in the formation of an amorphous metal oxide. The remaining unexposed precursor material is subsequently washed away by rinsing with a developer solvent [3]. In this work, a mixed oxide dielectric consisting of titanium and barium oxides (which possessed a k~10) was produced using a photosensitive mixed metal-organic precursor solution.…”

mentioning

confidence: 99%