Direct Observation of the 2D Gain Profile in High Power Tapered Semiconductor Optical Amplifiers

Swertfeger, Rebecca B.; Beil, James A.; Misak, Stephen M.; Thomas, J. A.; Campbell, Jenna; Renner, Daniel; Mashanovitch, Milan; Leisher, Paul O.

doi:10.5220/0006187301140121

Cited by 2 publications

(2 citation statements)

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“…When the tapered region is pumped with current, this mode can be amplified, resulting in high optical output power. Keeping the taper angle constant, the longer the waveguide, the greater the mode spread and the higher the achievable output power [36]. A wider taper angle allows the SOA to achieve higher power and improved beam quality, but it also means using a higher drive current [37,38].…”

Section: High Powermentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: High Powermentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…The results are listed in Table 1. The SOAs in the literature [26]- [30] are devices based on the master oscillator power amplifier (MOPA) structure. They cannot achieve high saturation power and high gain at the same time.…”

Section: Discussionmentioning

confidence: 99%

Monolithic Integrated Semiconductor Optical Amplifier With Broad Spectrum, High Power, and Small Linewidth Expansion

Liang

Wang

et al. 2021

IEEE Access

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Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integration, and anti-radiation advantages over optical fiber amplifiers. However, saturation output power and gain bandwidth have been limited in traditional structure SOAs. We demonstrate a monolithic integrated SOA with broad spectrum, high power, high gain, and small spectral linewidth expansion. The device adopts a two-stage amplified large optical cavity structure, and a lower optical field confinement factor was obtained by adjusting the thickness of the waveguide layer. The lower optical field confinement factor is conducive to improving the coupling efficiency and the maximum output power. Our device, fabricated only by standard i-line lithography with micron-scale precision, obtains excellent and stable performance. When the input power is set to 1 mW, the output power is 419 mW with a gain of 26.23 dB. When the input power is set to 25 mW at 25 °C , the output power increases to 600 mW with a gain of 13.8 dB. The corresponding gain bandwidth of 3 dB measures at least 70 nm. The spectral linewidth after the SOA is 1.15 times wider than that of the seed laser.INDEX TERMS broad spectrum, high gain, high power, semiconductor optical amplifiers, small linewidth expansion.

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Direct Observation of the 2D Gain Profile in High Power Tapered Semiconductor Optical Amplifiers

Cited by 2 publications

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A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Monolithic Integrated Semiconductor Optical Amplifier With Broad Spectrum, High Power, and Small Linewidth Expansion

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