Direct Observation of Pinning and Bowing of a Single Ferroelectric Domain Wall

Yang, Tianchen; Gopalan, Venkatraman; Swart, Pieter J.; Mohideen, U.

doi:10.1103/physrevlett.82.4106

Cited by 237 publications

(160 citation statements)

References 17 publications

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“…Rosenman et al [5] pointed out that defects are energy barriers for moving domain walls, which they cannot overcome and estimated the lateral dimension of domains as the region where external electric field exceeds so called pinning field. Sometimes this field determines the experimentally observed coercive field due the pinning-depinning mechanisms of domain walls transition [30], [31]. However the model [5] gives only the incomplite picture of domain formation since it does not take into account the depolarization field and domain wall energy.…”

Section: Discussionmentioning

confidence: 99%

Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

Morozovska

Eliseev

2006

Phys. Rev. B

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We calculate the realistic sizes of nano-domains recorded by the electric field of atomic force microscope tip in BaTiO 3 and LiNbO 3 ferroelectric-semiconductors in contrast to the over-estimated ones obtained in the previous works. We modified the existing models of domain formation allowing for the Debye screening, recharging of sluggish surface screening layers caused by emission current between the tip apex and the domain butt surface and the redistribution of domain depolarization field induced by the charged tip apex. We have shown that the depolarization field energy of the domain butt, Debye screening effects and field emission at high voltages lead to the essential decrease of the equilibrium domain sizes. We obtained, that the domain length and radius do not decrease continuously with voltage decrease: the domain appears with non-zero length and radius at definite critical voltage. Such "threshold" domain formation is similar to the first order phase transition and correlates with recent theoretical and experimental investigations.

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Section: Discussionmentioning

confidence: 99%

Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

Morozovska

Eliseev

2006

Phys. Rev. B

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“…8,9,11 The analysis of domain growth dynamics in congruent crystals becomes significantly harder due to the existence of strong obstacles which pin the motion of domain walls ͑DW͒. 12 The process of the DW overcoming the obstacles has not been studied yet which causes considerable difficulties in the interpretation of experiments on DW growth dynamics in ferroelectric congruent crystals. Therefore the DW dynamics should be studied in stoichiometric crystals, where the defect and pinning center concentrations are very small.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of ferroelectric domain growth in the field of atomic force microscope

Agronin

Molotskii

Rosenwaks

et al. 2006

Journal of Applied Physics

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Agronin, A.; Molotskii, M.; Rosenwaks, Y.; Rosenman, G.; Rodriguez, B. J.; Kingon, A. I.; and Gruverman, Alexei, "Dynamics of ferroelectric domain growth in the field of atomic force microscope" (2006 Application of very high voltage to atomic force microscope tip leads to the growth of narrow, stringlike domains in some ferroelectrics, a phenomenon that was named "ferroelectric domain breakdown." In this work the dynamics of domain breakdown have been studied experimentally and theoretically in stoichiometric lithium niobate ͑LN͒. The theory has been found to be in a good agreement with the measured domain radius temporal dependence. Dynamics of domain growth has also been studied in ultrathin LN crystals, where the domain breakdown phenomenon does not take place. It is also shown that domain formation processes occurring in bulk and ultrathin crystals are very different, and this is ascribed to the observed difference in depolarization energy dependence on the domain length.

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“…Indeed, if the boundary B is formed by two straight segments parallel to the z direction as in Ref. 25 (e.g., pinholes in a film) at distance L = 2R 0 from each other, then ξ does not depend on z, and from (10) we obtain the angle of domain wall deflection at the pinning site: β = 2M HR 0 /γ ab . On the other hand, if the boundary B is formed by straight lines parallel to y direction (e.g., scratches on a film surface), then ξ does not depend on y, and the deflection angle is α −1 times larger.…”

Section: Anisotropic Domain Wall Bendingmentioning

confidence: 99%

“…A domain wall pinned at two parallel straight lines assumes cylindrical shape with twice as smaller radius; this solution was discussed for a domain wall in a thin ferroelectric film. 25 If exchange stiffness is anisotropic, the analogy with the foam membrane no longer holds, because the domain wall surface tension is also anisotropic. Denoting the angle between the normal to the domain wall and the magnetization axis as φ, the surface tension of the domain wall is given by (2) with…”

Section: Anisotropic Domain Wall Bendingmentioning

confidence: 99%

Anisotropy of exchange stiffness and its effect on the properties of magnets

Belashchenko

2004

Journal of Magnetism and Magnetic Materials

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Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo5 alloys. The exchange stiffness is strongly anisotropic in all studied alloys. This anisotropy makes the domain wall surface tension anisotropic. Competition between this anisotropic surface tension and magnetostatic energy controls the formation and dynamics of nanoscale domain structures in hard magnets. Anisotropic domain wall bending is described in detail from the general point of view and with application to cellular Sm-Co magnets. It is shown that the repulsive cell-boundary pinning mechanism in these magnets is feasible only due to the anisotropic exchange stiffness if suitably oriented initial pinning centers are available. In polytwinned CoPt-type magnets the exchange stiffness anisotropy controls the orientation of macrodomain wall segments. These segments may reorient both statically during microstructural coarsening and dynamically during the macrodomain wall splitting in external field. Reorientation of segments may facilitate their pinning at antiphase boundaries.

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Direct Observation of Pinning and Bowing of a Single Ferroelectric Domain Wall

Cited by 237 publications

References 17 publications

Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

Screening and size effects on the nanodomain tailoring in ferroelectrics semiconductors

Dynamics of ferroelectric domain growth in the field of atomic force microscope

Anisotropy of exchange stiffness and its effect on the properties of magnets

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