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Rodrigues-Junior, Gilberto; Marçal, Lucas Atila Bernardes; Ribeiro, Guilherme A. S.; Rappl, P. H. O.; Abramof, E.; Sciammarella, Paulo Vitor; Guimarães, Luciano de Moura; Pérez, Carlos A.; Malachias, A.

doi:10.1103/physrevmaterials.4.023602

Cited by 6 publications

(4 citation statements)

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“…Similar to the M V 2 X 3 compounds, members of the (M V 2 ) m (M V 2 X 3 ) n series show topologically nontrivial properties and are thermoelectrics. ,,− Different surface terminations and termination-dependent electronic properties have been identified for cleaved Sb 2 Te and Bi 4 Se 3 crystals by ARPES studies where a complex interplay between structure and surface electronic properties was discovered. BiTe was recently discovered to be a dual 3D topological insulator (weak topological insulator and topological crystalline insulator phases simultaneously) and also showed termination-dependent surface states. , These findings suggest ample opportunity for further study of the members of (M V 2 ) m (M V 2 X 3 ) n series in the 2D limit.…”

Section: Post-transition Metal Chalcogenidesmentioning

confidence: 99%

“…A review by Ginley et al summarizes efforts in growing α-Sb 2 Te 3 , α-Bi 2 Se 3 , and α-Bi 2 Te 3 compounds using MBE . Precise control over the beam flux allows access to stoichiometries beyond M V 2 X 3 to other phases belonging to the (M V 2 ) m (M V 2 X 3 ) n series as has been demonstrated for the MBE growth of Sb 2 Te and SbTe, Sb 4 Te 3 , Bi–Se, and Bi–Te ,, compounds. While it is possible to achieve growth of compounds with small m and n , the pure growth of other members of the series is highly challenging due to disorder.…”

Section: Post-transition Metal Chalcogenidesmentioning

confidence: 99%

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Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

2021

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Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

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Section: Post-transition Metal Chalcogenidesmentioning

confidence: 99%

Section: Post-transition Metal Chalcogenidesmentioning

confidence: 99%

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

2021

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“…One way to achieve vdW epitaxy is to employ widely used molecular beam epitaxy (MBE) and use a substrate without dangling bonds. To date, there exist a number of reports detailing various ways to grow Bi 2 Te 3 (see for instance [10][11][12][13][14][15][16]). In all mentioned works the substrate was heated to a temperature =170-350 °C during the deposition process.…”

Section: Introductionmentioning

confidence: 99%

“…One notable example of MBE growth of Bi 2 Te 3 film is described in Ref. [16]. In this work, one effusion cell was loaded with Bi 2 Te 3 instead of pure Bi.…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling microscopy of Bi$_2$Te$_3$ films prepared by pulsed laser deposition: from nanocrystalline structures to van der Waals epitaxy

Fedotov,

Maizlakh,

Pavlovskiy

et al. 2022

Preprint

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Bi 2 Te 3 is a material with high efficiency of thermoelectric energy conversion. Recently, it was also recognized as a topological insulator, and is often used as the basis for creation of other types of topological matter. Pulsed laser deposition (PLD) is widely considered as a simple method for growing of multicomponent films, but not as a tool for van der Waals epitaxy. We demonstrate here that the van der Waals epitaxy of Bi 2 Te 3 is indeed impossible in vacuum PLD, but is possible in the presence of a background gas, which is confirmed by the results of scanning tunneling microscopy and spectroscopy studies. Results of ab initio calculations reproduce tunneling spectra of the first three terraces of epitaxial films of Bi 2 Te 3 . In addition, an unusual hexagonal superstructure resembling a charge-density wave is observed in overheated films.

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