Direct observation of hole carrier density profiles and their light induced manipulation at the surface of Ge
T. Prokscha,
K. H. Chow,
Z. Salman
et al.
Abstract:We demonstrate that, by using low-energy positive muon (µ + ) spin spectroscopy as a local probe technique, the profiles of free charge carriers can be directly determined in the accumulation/depletion surface regions of p-or n-type Ge wafers. The detection of free holes is accomplished by measuring the effect of the interaction of the free carriers with the µ + probe spin on the observable muon spin polarization. By tuning the energy of the low-energy µ + between 1 keV and 20 keV the near-surface region betwe… Show more
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