Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET

Taniguchi, Koki; Fang, Nan; Nagashio, Kosuke

doi:10.1063/1.5048099

Cited by 13 publications

(8 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, the recent demonstration of a natural thin‐body MoS 2 FET with an effective channel length of ≈ 3.9 nm has facilitated research on 2D layered channels due to overcoming the scaling limit of ≈ 5 nm for Si gate length . Although the dangling‐bond‐free surface of the layered channel is expected to ideally provide an electrically inert interface, there are many reports on the wide range of interface state densities ( D it ) from 10 11 to 10 13 eV −1 cm −2 for high‐ k top‐gate n ‐MoS 2 FET in reality, which must be reduced to improve the device performance. To date, several physical origins for D it have been proposed, which are summarized in Figure a.…”

Section: Introductionmentioning

confidence: 99%

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

Fang

Toyoda

Taniguchi

et al. 2019

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

2D materials are promising to overcome the scaling limit of Si field-effect transistors (FETs). However, the insulator/2D channel interface severely degrades the performance of 2D FETs, and the origin of the degradation remains largely unexplored. Here, the full energy spectra of the interface state densities (D it ) are presented for both n-and p-MoS 2 FETs, based on the comprehensive and systematic studies, i.e., full rage of channel thickness and various gate stack structures with h-BN as well as high-k oxides. For n-MoS 2 , D it around the mid-gap is drastically reduced to 5 × 10 11 cm −2 eV −1 for the heterostructure FET with h-BN from 5 × 10 12 cm −2 eV −1 for the high-k top-gate. On the other hand, D it remains high, ≈10 13 cm −2 eV −1 , even for the heterostructure FET for p-MoS 2 . The systematic study elucidates that the strain induced externally through the substrate surface roughness and high-k deposition process is the origin for the interface degradation on conduction band side, while sulfur-vacancy-induced defect states dominate the interface degradation on valance band side. The present understanding of the interface properties provides the key to further improving the performance of 2D FETs.

show abstract

Section: Introductionmentioning

confidence: 99%

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

Fang

Toyoda

Taniguchi

et al. 2019

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…Literature encompasses examples of materials like Ti/Au [156,157], Cr/Au [158,159], Ag/Au [160,161] and Ni/Au [162,163], Al [164,165] for realizing electrical contacts in MoS 2 FETs. It may be noted that MoS 2 FETs with Ag/Au contacts provides 60 times higher ON current (I ON ) compared to devices with Ti/Au contacts [166].…”

Section: Contact Materials Selection and Work Functionmentioning

confidence: 99%

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS₂field-effect transistors

Thoutam¹,

Mathew²,

Ajayan³

et al. 2023

Nanotechnology

View full text Add to dashboard Cite

The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional (2D) materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS2) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore’s law. This review discusses the various “fabrication challenges” in making MoS2 based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS2. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS2 interface for optimum MoS2-based device performance. The tunable band-gap of MoS2 with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS2 in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS2 and its effect on structural and electronic properties are extensively discussed.

show abstract

“…However, detailed studies of the 2D heterostructure interface properties have been quite limited [6][7][8][9][10][11][12][13][14] because it is difficult to apply conventional C-V measurements to 2D systems. Therefore, we have faced this issue squarely in our work to date [15][16][17][18][19][20][21]. In this review article, the SiO 2 /Si interface properties revealed by many dedicated researchers are first compared with the fundamental properties of graphene and MoS 2 on the substrates.…”

Section: Introductionmentioning

confidence: 99%

Understanding interface properties in 2D heterostructure FETs

Nagashio

2020

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, 2D layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for both their fundamental physics and applications, the discussion of 2D electron device application to the future integrated circuit is still based on the expectation of the inherently high properties that 2D materials ideally possess. This review article focuses on the gate stack property, which is one of most important building blocks in the field effect transistor. Starting from the comparison of the 2D/SiO2 interface properties with the conventional SiO2/Si interface properties, recent advances in the studies of gate stack properties for bilayer graphene and MoS2 FETs are discussed. In particular, the advantages and disadvantages of the 2D heterostructures with 2D insulator of h-BN are emphasized. This review may provide conceptual and experimental approaches for controlling the 2D heterointerface properties.

show abstract

Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET

Cited by 13 publications

References 31 publications

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS₂field-effect transistors

Understanding interface properties in 2D heterostructure FETs

Contact Info

Product

Resources

About

Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET

Cited by 13 publications

References 31 publications

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS2 Field‐Effect Transistors

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS2 Field‐Effect Transistors

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2field-effect transistors

Understanding interface properties in 2D heterostructure FETs

Contact Info

Product

Resources

About

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS₂ Field‐Effect Transistors

A critical review of fabrication challenges and reliability issues in top/bottom gated MoS₂field-effect transistors