Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

Qu, Jiangtao; Choi, Wonsik; Mohseni, Parsian K.; Li, Xiuling; Zhang, Yingjie; Chen, Hansheng; Ringer, Simon P.; Zheng, Rongkun

doi:10.1021/acsami.6b08919

Cited by 11 publications

(5 citation statements)

References 44 publications

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“…These observations provide spatially resolved evidence at the nanometer scale that the distribution of carriers (holes) in the Zn-doped GaAs NWs is not uniform electrically and indicate that there is an accumulation of free carriers at the twin-plane defects regions and a depletion of free carriers at the corrugation peaks. Note that the high capacitance detected at the NW/substrate interface may originate from the geometrical artifact of sMIM tip − and the existence of a highly Zn-doped GaAs parasitic thin film under the NW as previously reported by APT measurements normal to the substrate (see the Supporting Information for more explanations).…”

Section: Resultssupporting

confidence: 54%

“…Several methods exist for the determination of dopant distribution profiles in semiconductor NWs, including secondary ion mass spectrometry (SIMS) and three-dimensional (3-D) near-atomic-scale spatial resolution via atom-probe tomography (APT). − While both SIMS and APT offer the ability to quantitatively determine concentration of the dopant impurities, these characterization techniques often require complicated and time-consuming specimen preparation steps. Moreover, these techniques provide only the physical concentration of the impurities instead of the electrical carrier concentration.…”

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confidence: 99%

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Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires

Choi¹,

Seabron²,

Mohseni³

et al. 2017

ACS Nano

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Selective lateral epitaxial (SLE) semiconductor nanowires (NWs), with their perfect in-plane epitaxial alignment, ability to form lateral complex p-n junctions in situ, and compatibility with planar processing, are a distinctive platform for next-generation device development. However, the incorporation and distribution of impurity dopants in these planar NWs via the vapor-liquid-solid growth mechanism remain relatively unexplored. Here, we present a detailed study of SLE planar GaAs NWs containing multiple alternating axial segments doped with Si and Zn impurities by metalorganic chemical vapor deposition. The dopant profile of the lateral multi-p-n junction GaAs NWs was imaged simultaneously with nanowire topography using scanning microwave impedance microscopy and correlated with infrared scattering-type near-field optical microscopy. Our results provide unambiguous evidence that Zn dopants in the periodically twinned and topologically corrugated p-type segments are preferentially segregated at twin plane boundaries, while Si impurity atoms are uniformly distributed within the n-type segments of the NWs. These results are further supported by microwave impedance modulation microscopy. The density functional theory based modeling shows that the presence of Zn dopant atoms reduces the formation energy of these twin planes, and the effect becomes significantly stronger with a slight increase of Zn concentration. This implies that the twin formation is expected to appear when a threshold planar concentration of Zn is achieved, making the onset and twin periodicity dependent on both Zn concentration and nanowire diameter, in perfect agreement with our experimental observations.

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Section: Resultssupporting

confidence: 54%

mentioning

confidence: 99%

Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires

Choi¹,

Seabron²,

Mohseni³

et al. 2017

ACS Nano

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“…In addition, selective lateral sequential propagation of growth provides unprecedented control of structure variation in plane monolithically. Well-controlled lateral p-n junction planar nanowires have been achieved and reported separately [109][110][111]. Lateral heterojunctions are not as straightforward because of the solubility difference of different materials in the seed particle.…”

Section: Discussionmentioning

confidence: 99%

A review of III–V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors

Zhang¹,

Miao²,

Chabak³

et al. 2017

J. Phys. D: Appl. Phys.

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Nanowires have long been regarded as a promising architecture for beyond Si CMOS logic, future III-V RF electronics, next generation optoelectronic applications, as well as heterogeneous integration. The inherent 3D structure also enables new device concepts that are otherwise not accessible with conventional technology. Nanowires grown using bottom-up epitaxial methods such as metalorganic chemical vapor deposition are free of ion-induced damage, which is especially critical for III-V because of the irreversibility of such damage, and can be scaled to dimensions smaller than lithographically defined. The challenges for nanowire based devices have been the controllability and compatibility with Si CMOS manufacturing. The discovery of parallel arrays of planar III-V nanowire growth mode provides an in-plane nanowire configuration that is perfectly compatible with existing planar processing technology for industry. The selective lateral epitaxy nature guided by the metal nanoparticles via the vapor-liquid-solid (VLS) mechanism opens up a new paradigm of crystal growth and consequently enabled in situ lateral and radial junctions. In this article, we review the planar nanowire based transistor development, particularly, planar III-As compound semiconductor based transistors enabled by this bottom-up self-assembled selective lateral VLS mechanism. We first review the characteristics and mechanism of planar nanowire growth, then focus on the growth, fabrication, and DC and RF performance of metalsemiconductor field-effect transistors, metal-oxide semiconductor field-effect transistors, and high electron mobility transistors (HEMTs), before providing our perspective on future development.

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“…[44] Dopant diffusion is also an issue in III-V NWs (for example GaAs NWs), as has been observed for a variety of dopant elements. [45][46][47] The pres-ence of point defects, either intrinsic or mediated by excess doping, can further aggravate dopant redistribution, and even lead to diffusion-induced layer disordering, seen in for example Sidoped AlGaAs/GaAs MQW structures. [48] Furthermore, point defects, such as vacancies, were found in large quantities in GaAsbased NWs, even without doping.…”

Section: Introductionmentioning

confidence: 99%

Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)‐AlGaAs Core‐Shell Nanowire Lasers

Schreitmüller,

Jeong,

Esmaielpour

et al. 2023

Adv Funct Materials

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GaAs‐AlGaAs based nanowire (NW) lasers hold great potential for on‐chip photonic applications, where lasing metrics have steadily improved over the years by optimizing resonator design and surface passivation methods. The factor that will ultimately limit the performance will depend on material properties, such as native‐ or impurity‐induced point defects and their impact on non‐radiative recombination. Here, the role of impurity‐induced point defects on the lasing performance of low‐threshold GaAs(Sb)‐AlGaAs NW‐lasers is evaluated, particularly by exploring Si‐dopants and their associated vacancy complexes. Si‐induced point defects and their self‐compensating nature are identified using correlated atom probe tomography, resonant Raman scattering, and photoluminescence experiments. Under pulsed optical excitation the lasing threshold is remarkably low (<10 µJ cm−2) and insensitive to impurity defects over a wide range of Si doping densities, while excess doping ([Si]>1019 cm−3) imposes increased threshold at low temperature. These characteristics coincide with increased Shockley‐Read‐Hall recombination, reflected by shorter carrier lifetimes, and reduced internal quantum efficiencies (IQE) . Remarkably, despite the lower IQE the presence of self‐compensating Si‐vacancy defects provides an improved temperature stability in lasing threshold with higher characteristic temperature and room‐temperature lasing. These findings highlight an overall large tolerance of lasing metrics to impurity defects in GaAs‐AlGaAs based NW‐lasers.

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Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography

Cited by 11 publications

References 44 publications

Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires

Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires

A review of III–V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors

Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)‐AlGaAs Core‐Shell Nanowire Lasers

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