“…Since channel dopant atoms are randomly placed in the channels, the number and the position of dopant atoms are fluctuated, resulting in random V TH variability. Due to increasing variability, some logic circuits or static random access memory (SRAM) cells fail especially at low V DD , resulting in severe yield loss [14]. In order to deal with the variability problem, the extensive measurement, cause analysis, and developments of new suppression methods of variability are essential.…”